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參數(shù)資料
| 型號(hào)： | LTC1163C |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Octal Bus Transceivers With 3-State Outputs 20-SOIC 0 to 70 |
| 中文描述： | 三1.8V至6V的高邊MOSFET驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 231K |
| 代理商： | LTC1163C |
4
LTC1163/LTC1165
C
HARA TERISTICS
U
A
TYPICAL PERFOR
CE
PIU
U
Input Pins
The LTC1163 is noninverting; i.e., the MOSFET gate is
driven above the supply when the input pin is held high.
The LTC1165 is inverting and drives the MOSFET gate high
when the input pin is held low. The inverting inputs of the
LTC1165 allow P-channel switches to be replaced by
lower resistance/cost N-channel switches while maintain-
ing system drive polarity.
The LTC1163/LTC1165 logic inputs are high impedance
CMOS gates with ESD protection diodes to ground and
therefore should not be forced below ground. The inputs
can however, be driven above the power supply rail as
there are no clamping diodes connected between the input
pins and supply pin. This facilitates operation in mixed
5V/3V systems.
U
Output Pins
The output pin is either driven to ground when the switch
is turned OFF or driven above the supply rail when the
switch is turned ON. The output is clamped to about 14V
above ground by a built-in Zener clamp. This pin has a
relatively high impedance when driven above the rail (the
equivalent of a few hundred k
). Care should be taken to
minimize any loading of this pin by parasitic resistance to
ground or supply.
Supply Pin
A 150
resistor should be inserted in series with the
ground pin or supply pin if negative supply voltage tran-
sients are anticipated. This will limit the current flowing
from the power source into the LTC1163/LTC1165 to tens
of milliamps during reverse battery conditions.
OPERATIOU
The LTC1163/LTC1165 are triple micropower MOSFET
drivers designed for operation over the 1.8V to 6V supply
range and include the following functional blocks:
3V Logic Compatible Inputs
The LTC1163/LTC1165 inputs have been designed to
accommodate a wide range of 3V and 5V logic families.
The input threshold voltage is set at roughly 50% of the
supply voltage and approximately 200mV of input hyster-
esis is provided to ensure clean switching.
The input enables all of the following circuit blocks: the
bias generator, the high frequency oscillator and gate
charge pump. Therefore, when the input is turned off, the
entire circuit powers down and the supply current drops
below 1
μ
A.
Standby Supply Current
TEMPERATURE (°C)
0
S
μ
A
5
4
3
2
1
0
–1
10
20
30
40
LTC1163/65 TPC07
50
60
70
MOSFET Gate Drive Current
GATE VOLTAGE ABOVE SUPPLY (V)
1
G
μ
A
10
100
1000
0
4
6
8
0.1
2
10
LTC1163/65 TPC09
V
S
= 5V
V
S
= 3.3V
V
S
= 2.2V
V
S
= 1.8V
T
A
= 25°C
Supply Current per Driver ON
TEMPERATURE (°C)
0
S
μ
A
300
250
200
150
100
50
0
10
20
30
40
LTC1163/65 TPC08
50
60
70
V
S
= 5V
V
S
= 3.3V
V
S
= 1.8V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1163CN8 | Triple 1.8V to 6V High-Side MOSFET Drivers |
| LTC1163CS8 | Triple 1.8V to 6V High-Side MOSFET Drivers |
| LTC1165CN8 | Triple 1.8V to 6V High-Side MOSFET Drivers |
| LTC1165CS8 | Triple 1.8V to 6V High-Side MOSFET Drivers |
| LTC1165 | Triple 1.8V to 6V High-Side MOSFET Drivers(1.8V～6V，三路高邊MOS場效應(yīng)管驅(qū)動(dòng)器（反相輸入）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1163CN8 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Triple 1.8V to 6V High-Side MOSFET Drivers |
| LTC1163CN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE TRPL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| LTC1163CS8 | 功能描述:IC MOSFET DVR HI-SIDE TRPL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1163CS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE TRPL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1163CS8#TR | 功能描述:IC DRIVER MOSF HISIDE TRPL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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