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參數(shù)資料
| 型號(hào)： | LTC1165CN8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Triple 1.8V to 6V High-Side MOSFET Drivers |
| 中文描述： | 3 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 231K |
| 代理商： | LTC1165CN8 |
6
LTC1163/LTC1165
APPLICATIOU
W
U
U
Figure 1. Powering a Large Capacitive Load
on a 3.3V supply which is compatible with 5V TTL and
CMOS logic. (The LTC1163/LTC1165 cannot however, be
driven by 3V logic when powered from a 5V supply
because the threshold is approximately 2.5V.)
TYPICAL APPLICATIU
PCMCIA Card 3.3V/5V V
CC
Switch
V
S
LTC1165
OUT1
OUT2
OUT3
GND
IN1
IN2
IN3
V
CC
5V
V
CC
3V
PCMCIA
CONTROLLER
+
10
μ
F
5V
PC
CARD
SOCKET
MMDF3N02HD
+
1
μ
F
1/2 MMDF3N02HD
V
CC
3.3V
LTC1163/65 TA03
NOTE: USE LTC1163 WITH NONINVERTING PCMCIA CONTROLLERS
managed by the system regulator. R2 is required to
eliminate the possibility of parasitic MOSFET oscillations
during switch transitions. It is a good practice to isolate the
gates of paralleled MOSFETs with 1k resistors to decrease
the possibility of interaction between switches.
Mixed 5V/3V Systems
Because the input ESD protection diodes are referenced to
ground instead of the supply pin, it is possible to drive the
LTC1163/LTC1165 inputs from 5V CMOS or TTL logic
even though the LTC1163/LTC1165 are powered from a
3.3V supply as shown in Figure 2. The input threshold
voltage is approximately 50% of the supply voltage or 1.6V
Reverse Battery Protection
The LTC1163/LTC1165 can be protected against reverse
battery conditions by connecting a 150
resistor in series
with the ground pin or supply pin. The resistor limits the
supply current to less than 24mA with –3.6V applied.
Because the LTC1163/LTC1165 draw very little current
while in normal operation, the drop across the resistor is
minimal. The 3.3V
μ
P (or control logic) can be protected by
adding 10k resistors in series with the input pins.
Figure 2. Direct Interface to 5V Logic
V
S
1/3 LTC1163
OUT1
GND
IN1
ON/OFF
R1
100k
R2
1k
C1
0.1
μ
F
3.3V
LOAD
+
C
L
100
μ
F
V
IN
LT1129-3.3
3.3
μ
F
+
MTD3055EL
3.3V
LTC1163/65 F01
V
S
1/3 LTC1163
OUT1
GND
IN1
3.3V
LOAD
3.3V
MTD3055EL
LTC1163/65 F01
5V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1165CN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE TRPL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1165CS8 | 功能描述:IC MOSFET DVR HI-SIDE TRPL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1165CS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE TRPL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1165CS8#TR | 功能描述:IC DRIVER MOSF HISIDE TRPL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1165CS8#TRPBF | 功能描述:IC MOSFET DVR HI-SIDE TRPL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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