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參數(shù)資料
| 型號： | LTC1255 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Dual 24V High-Side MOSFET Driver |
| 中文描述： | 雙24V的高邊MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 340K |
| 代理商： | LTC1255 |
9
LTC1255
APPLICATIOU
W
U
U
V
S
DS1
1/2 LTC1255
G1
GND
IN1
IRF530
12V
18V
+
100
μ
F
R
0.036
LTC1255 F06
C
0.01
μ
F
R
100k
1N4148
LOAD
Figure 6. Using a Speed-Up Diode
The large output capacitors on many switching regula-
tors, on the other hand, may be able to hold the supply
pin of the LTC1255 above 3.5V sufficiently long that this
extra filtering is not required.
Because the LTC1255 is micropower in both the standby
and ON state, the voltage drop across the supply filter
is very small (typically <6mV) and does not signifi-
cantly alter the accuracy of the drain sense threshold
voltage which is typically 100mV.
AUTOMOTIVE APPLICATIONS
Reverse Battery Protection
The LTC1255 can be protected against reverse battery
conditions by connecting a resistor in series with the
ground lead as shown in Figure 8. The resistor limits the
supply current to less than 120mA with –12V applied.
Since the LTC1255 draws very little current while in
normal operation, the drop across the ground resistor
is minimal. The 5V
μ
P (or controlling logic) is protected
by the 10k resistors in series with the input.
Figure 7. Supply Filter for Current Limited Supplies
V
S
DS1
1/2 LTC1255
G1
GND
IN1
MTP12N06E
12V
14V
+
10
μ
F
R
0.036
LTC1255 F08
LOAD
100
28V
10k
μ
p OR
CONTROL
LOGIC
5V
Figure 8. Reverse Battery Protection
Transient Overvoltage Protection
A common scheme used to limit overvoltage transients
on a 14V nominal automotive power bus is to clamp the
supply to the module containing the high-side MOSFET
switches with a large transient suppressor diode, D1 in
Figure 9. This diode limits the supply voltage to 40V
under worse case conditions. The LTC1255 is designed
to survive short (10ms) 40V transients and return to
normal operation after the transient has passed.
Current Limited Power Supplies
The LTC1255 requires at least 3.5V at the supply pin to
ensure proper operation. It is therefore necessary that
the supply to the LTC1255 be held higher than 3.5V at
all times, even when the output of the switch is short
circuited to ground. The output voltage of a current
limited regulator may drop very quickly during short
circuit and pull the supply pin of the LTC1255 below
3.5V before the shutdown circuitry has had time to
respond and remove drive from the gate of the power
MOSFET. A supply filter should be added as shown in
Figure 7 which holds the supply pin of the LTC1255
high long enough for the overcurrent shutdown cir-
cuitry to respond and fully discharge the gate.
Linear regulators with small output capacitors are the
most difficult to protect as they can “switch” from a
voltage mode to a current limited mode very quickly.
V
S
DS1
1/2 LTC1255
G1
GND
IN1
MTP12N06E
12V
15V
+
10
μ
F
R
SENSE
0.1
LTC1255 F07
0.01
μ
F
100k
1N4148
10
*
+
47
μ
F*
+
10
μ
F
12V/2A
REGULATOR
SHORT
CIRCUIT
*SUPPLY FILTER COMPONENT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1255I | Dual 24V High-Side MOSFET Driver |
| LTC1255CS8 | Dual 24V High-Side MOSFET Driver |
| LTC1255IN8 | Dual 24V High-Side MOSFET Driver |
| LTC1255IS8 | Dual 24V High-Side MOSFET Driver |
| LTC1258-2.5 | Micropower Low Dropout References(2.5V輸出,微功耗，低壓差電壓基準(zhǔn)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1255CN8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CS8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1255CS8#TR | 功能描述:IC DRVR MOSF DUAL 24V HISD 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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