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參數(shù)資料
| 型號： | LTC1255CN8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Dual 24V High-Side MOSFET Driver |
| 中文描述： | 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | DIP-8 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 340K |
| 代理商： | LTC1255CN8 |
1
LTC1255
Dual 24V High-Side
MOSFET Driver
The LTC1255 dual high-side driver allows using low
cost N-channel FETs for high-side industrial and auto-
motive switching applications. An internal charge pump
boosts the gate drive voltage above the positive rail,
fully enhancing an N-channel MOS switch with no
external components. Low power operation, with 12
μ
A
standby current, allows use in virtually all systems with
maximum efficiency.
Included on-chip is independent overcurrent sensing
to provide automatic shutdown in case of short circuits.
A time delay can be added to the current sense to
prevent false triggering on high in-rush current loads.
The LTC1255 operates from 9V to 24V supplies and is
well suited for industrial and automotive applications.
The LTC1255 is available in both an 8-pin DIP and an
8-pin SOIC.
S
FEATURE
I
Fully Enhances N-Channel Power MOSFETs
I
12
μ
A Standby Current
I
Operates at Supply Voltages from 9V to 24V
I
Short Circuit Protection
I
Easily Protected Against Supply Transients
I
Controlled Switching ON and OFF Times
I
No External Charge Pump Components
I
Compatible With Standard Logic Families
I
Available in 8-Pin SOIC
U
S
A
O
PPLICATI
I
Solenoid Drivers
I
DC Motor Drivers
I
Stepper Motor Drivers
I
Lamp Drivers/Dimmers
I
Relay Drivers
I
Low Frequency H-Bridge
I
P-Channel Switch Replacement
D
U
ESCRIPTIO
U
A
O
PPLICATI
TYPICAL
12V
1N4001
+
10
μ
F
IRLR024
24V
24V/0.5A
SOLENOID
V
S
DS2
LTC1255
IN2
GND
DS1
IN1
G1
G2
0.036
0.036
IRLR024
12V
1N4001
24V/0.5A
SOLENOID
FROM
μ
P, ETC.
FROM
μ
P, ETC.
LTC1255 TA01
Standby Supply Current
Dual 24V High-Side Switch with Overcurrent Protection
SUPPLY VOLTAGE (V)
0
0
S
(
μ
A
10
15
20
25
30
35
5
10
15
20
LTC1255 TA02
25
40
45
50
5
30
V
IN1
= V
IN2
= 0V
T
A
= 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1255C | Dual 24V High-Side MOSFET Driver |
| LTC1255 | Dual 24V High-Side MOSFET Driver |
| LTC1255I | Dual 24V High-Side MOSFET Driver |
| LTC1255CS8 | Dual 24V High-Side MOSFET Driver |
| LTC1255IN8 | Dual 24V High-Side MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1255CN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CS8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1255CS8#TR | 功能描述:IC DRVR MOSF DUAL 24V HISD 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CS8#TRPBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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