參數(shù)資料
型號(hào)： LTC1430
廠(chǎng)商： Linear Technology Corporation
元件分類(lèi)： 串行ADC
英文描述： 14-Bit 200KSPS ADC Serial Out, Auto PWRDN, Pseudo Differential Input 8-SOIC -40 to 85
中文描述： 高功率降壓型開(kāi)關(guān)穩(wěn)壓控制器
文件頁(yè)數(shù)： 7/16頁(yè)
文件大?。?/td> 211K
代理商： LTC1430
7
LTC1430
MOSFET Gate Drive
Gate drive for the top N-channel MOSFET M1 is supplied
from PV
CC1
. This supply must be above PV
CC
( the main
power supply input) by at least one power MOSFET
V
GS(ON)
for efficient operation. An internal level shifter
allows PV
CC1
to operate at voltages above V
CC
and PV
CC
,
up to 13V maximum. This higher voltage can be supplied
with a separate supply, or it can be generated using a
simple charge pump as shown in Figure 4. When using a
separate PV
CC1
supply, the PV
CC
input may exhibit a large
inrush current if PV
CC1
is present during power up. The
90% maximum duty cycle ensures that the charge pump
will always provide sufficient gate drive to M1. Gate drive
for the bottom MOSFET M2 is provided through PV
CC2
for
16-lead devices or V
CC
/PV
CC2
for 8-lead devices. PV
CC2
can usually be driven directly from PV
CC
with 16-lead
parts, although it can also be charge pumped or connected
to an alternate supply if desired. The 8-lead parts require
an RC filter from PV
CC
to ensure proper operation; see
Input Supply Considerations.
EXTERNAL COMPONENT SELECTION
Power MOSFETs
Two N-channel power MOSFETs are required for most
LTC1430 circuits. These should be selected based prima-
rily on threshold and on-resistance considerations; ther-
mal dissipation is often a secondary concern in high
efficiency designs. Required MOSFET threshold should be
determined based on the available power supply voltages
and/or the complexity of the gate drive charge pump
scheme. In 5V input designs where an auxiliary 12V supply
is available to power PV
CC1
and PV
CC2
, standard MOSFETs
with R
DS(ON)
specified at V
GS
= 5V or 6V can be used with
good results. The current drawn from this supply varies
with the MOSFETs used and the LTC1430’s operating
frequency, but is generally less than 50mA.
LTC1430 designs that use a doubler charge pump to
generate gate drive for M1 and run from PV
CC
voltages
below 7V cannot provide enough gate drive voltage to fully
enhance standard power MOSFETs. When run from 5V, a
doubler circuit may work with standard MOSFETs, but the
MOSFET R
ON
may be quite high, raising the dissipation in
the FETs and costing efficiency. Logic level FETs are a
better choice for 5V PV
CC
systems; they can be fully
enhanced with a doubler charge pump and will operate at
maximum efficiency. Doubler designs running from PV
CC
voltages near 4V will begin to run into efficiency problems
even with logic level FETs; such designs should be built
with tripler charge pumps (see Figure 5) or with newer,
super low threshold MOSFETs. Note that doubler charge
pump designs running from more than 7V and all tripler
charge pump designs should include a zener clamp diode
D
Z
at PV
CC1
to prevent transients from exceeding the
absolute maximum rating at that pin.
APPLICATIU
W
U
U
Figure 4. Doubling Charge Pump
D
12V
1N5242
1N5817
1N5817
LTC1430
PV
CC1
PV
CC2
0.1
μ
F
10
μ
F
M1
L1
M2
G1
G2
PV
CC
C
OUT
V
OUT
LTC1430 F05
+
0.1
μ
F
1N5817
Figure 5. Tripling Charge Pump
D
Z
12V
1N5242
OPTIONAL
USE FOR PV
CC
≥
7V
LTC1430
PV
CC1
PV
CC2
1N4148
M1
L1
M2
G1
G2
PV
CC
C
OUT
V
OUT
LTC1430 F04
+
0.1
μ
F
相關(guān)PDF資料
PDF描述
LTC1430C 14-bit, 5V, 200KSPS, 8-Channel Unipolar ADC 24-SOIC 0 to 70
LTC1430CS8 Isolated Flyback Switching Regulator with 9V Output
LTC1430CN 14-bit, 5V, 200KSPS, 8-Channel Unipolar ADC 24-SOIC 0 to 70
LTC1430CS 14-bit, 5V, 200KSPS, 8-Channel Unipolar ADC 24-SOIC 0 to 70
LTC1430I 14-bit, 5V, 200KSPS, 8-Channel Unipolar ADC 24-SOIC 0 to 70
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