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參數(shù)資料
| 型號： | LTC1435AIG |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | High Efficiency Low Noise Synchronous Step-Down Switching Regulator |
| 中文描述： | 2 A SWITCHING CONTROLLER, 138 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 0.209 INCH, PLASTIC, SSOP-16 |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 427K |
| 代理商： | LTC1435AIG |
9
LTC1435A
APPLICATIO
S I
FOR
ATIO
U
a fixed inductor value, but it is very dependent on induc-
tance selected. As inductance increases, core losses go
down. Unfortunately, increased inductance requires more
turns of wire and therefore copper losses will increase.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can
concentrate on copper loss and preventing saturation.
Ferrite core material saturates “hard,” which means that in-
ductance collapses abruptly when the peak design current
is exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple.
Do not
allow the core to saturate!
Molypermalloy (from Magnetics, Inc.) is a very good, low
loss core material for toroids, but it is more expensive than
ferrite. A reasonable compromise from the same manufac-
turer is Kool M
μ
. Toroids are very space efficient, especially
when you can use several layers of wire. Because they
generally lack a bobbin, mounting is more difficult. How-
ever, designs for surface mount are available which do not
increase the height significantly.
W
U
U
Power MOSFET and D1 Selection
Two external power MOSFETs must be selected for use with
the LTC1435A: an N-channel MOSFET for the top (main)
switch and an N-channel MOSFET for the bottom (synchro-
nous) switch.
The peak-to-peak gate drive levels are set by the INTV
CC
voltage. This voltage is typically 5V during start-up (see
EXTV
CC
Pin Connection). Consequently, logic level thresh-
old MOSFETs must be used in most LTC1435A applications.
The only exception is applications in which EXTV
CC
is
powered from an external supply greater than 8V (must be
less than 10V), in which standard threshold MOSFETs
(V
GS(TH)
< 4V) may be used. Pay close attention to the BV
DSS
specification for the MOSFETs as well; many of the logic level
MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the “ON”
resistance R
DS(ON)
, reverse transfer capacitance C
RSS
, in-
put voltage and maximum output current. When the
LTC1435A is operating in continuous mode the duty cycles
for the top and bottom MOSFETs are given by:
Main Switch Duty Cycle =V
V
Synchronous Switch Duty Cycle =
V
OUT
IN
IN
(
)
V
V
OUT
IN
The MOSFET power dissipations at maximum output cur-
rent are given by:
P
V
V
I
R
)
I
C
f
P
V
V
V
I
R
)
MAIN
OUT
IN
MAX
DS ON
MAX
RSS
SYNC
IN
OUT
IN
MAX
DS ON
=
(
)
+
(
+
)
(
)(
)( )
=
(
)
+
(
)
)
2
1 85
.
2
1
1
δ
δ
k V
IN
where
δ
is the temperature dependency of R
DS(ON)
and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I
2
R losses while the topside
N-channel equation includes an additional term for tran-
sition losses, which are highest at high input voltages.
For V
IN
< 20V the high current efficiency generally im-
proves with larger MOSFETs, while for V
IN
> 20V the
transition losses rapidly increase to the point that the use
of a higher R
DS(ON)
device with lower C
RSS
actual pro-
vides higher efficiency. The synchronous MOSFET losses
are greatest at high input voltage or during a short circuit
when the duty cycle in this switch is nearly 100%. Refer
to the Foldback Current Limiting section for further appli-
cations information.
The term (1 +
δ
) is generally given for a MOSFET in the form
of a normalized R
DS(ON)
vs Temperature curve, but
δ
= 0.005/
°
C can be used as an approximation for low
voltage MOSFETs. C
RSS
is usually specified in the MOSFET
characteristics. The constant k = 2.5 can be used to esti-
mate the contributions of the two terms in the main switch
dissipation equation.
The Schottky diode D1 shown in Figure 1 conducts during
the dead-time between the conduction of the two large
power MOSFETs. This prevents the body diode of the bot-
tom MOSFET from turning on and storing charge during the
dead-time, which could cost as much as 1% in efficiency.
A 1A Schottky is generally a good size for 3A regulators.
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