參數(shù)資料
型號: LTC1435IS
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: High Efficiency Low Noise Synchronous Step-Down Switching Regulator
中文描述: 2 A SWITCHING CONTROLLER, 400 kHz SWITCHING FREQ-MAX, PDSO16
封裝: 0.150 INCH, PLASTIC, SO-16
文件頁數(shù): 15/20頁
文件大小: 404K
代理商: LTC1435IS
15
LTC1435
APPLICATIO
S I
N
FOR
ATIO
U
Design Example
As a design example, assume V
IN
= 12V(nominal), V
IN
=
22V(max), V
OUT
= 3.3V, I
MAX
= 3A and f = 250kHz, R
SENSE
and C
OSC
can immediately be calculated:
R
SENSE
= 100mV/3A = 0.033
C
OSC
= 1.37(10
4
)/250 – 11 = 43pF
Referring to Figure 3, a 10
μ
H inductor falls within the
recommended range. To check the actual value of the
ripple current the following equation is used:
W
U
I
V
f L
V
V
L
OUT
OUT
IN
=
( )( )
1–
The highest value of the ripple current occurs at the
maximum input voltage:
V
kHz
H
μ
(
250
10
The power dissipation on the topside MOSFET can be
easily estimated. Choosing a Siliconix Si4412DY results
in: R
DS(ON)
= 0.042
, C
RSS
= 100pF. At maximum input
voltage with T(estimated) = 50
°
C:
( )
I
V
V
L
=
)
=
3.
1
3 3
22
1. 2A
.
P
V
V
C
C
)
=
V
A
pF
kHz
mW
MAIN
=
+
(
( )(
)
°
)(
°
(
)
[
.
]
(
)
+
)
3 3
22
3
1
0 005 50
.
25
0 042
.
2 5 22
.
3
100
250
122
2
1 85
.
The most stringent requirement for the synchronous
N-channel MOSFET occurs when V
OUT
= 0 (i.e. short
circuit). In this case the worst-case dissipation rises to:
=
(
With the 0.033
sense resistor I
SC(AVG)
= 4A will result,
increasing the Si4412DY dissipation to 950mW at a die
temperature of 105
°
C.
C
IN
is chosen for an RMS current rating of at least 1.5A at
temperature. C
OUT
is chosen with an ESR of 0.03
for low
output ripple. The output ripple in continuous mode will be
P
I
R
SYNC
SC AVG
DS ON
)
+
(
)
)
)
2
1
δ
highest at the maximum input voltage. The output voltage
ripple due to ESR is approximately:
V
ORIPPLE
= R
ESR
(
I
L
) = 0.03
(1.112A) = 34mV
P-P
PC Board Layout Checklist
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of the
LTC1435. These items are also illustrated graphically in
the layout diagram of Figure 8. Check the following in your
layout:
1. Are the signal and power grounds segregated The
LTC1435 signal ground pin must return to the (–) plate
of C
OUT
. The power ground connects to the source of
the bottom N-channel MOSFET, anode of the Schottky
diode, and (–) plate of C
IN
, which should have as short
lead lengths as possible.
2. Does the V
OSENSE
pin connect directly to the feedback
resistors The resistive divider R1, R2 must be con-
nected between the (+) plate of C
OUT
and signal ground.
The 100pF capacitor should be as close as possible to
the LTC1435.
3. Are the SENSE
and SENSE
+
leads routed together with
minimum PC trace spacing The filter capacitor be-
tween SENSE
+
and SENSE
should be as close as
possible to the LTC1435.
4. Does the (+) plate of C
IN
connect to the drain of the
topside MOSFET(s) as closely as possible This capaci-
tor provides the AC current to the MOSFET(s).
5. Is the INTV
CC
decoupling capacitor connected closely
between
INTV
CC
and the power ground pin This ca-
pacitor carries the MOSFET driver peak currents.
6. Keep the switching node SW away from sensitive small-
signal nodes. Ideally the switch node should be placed
at the furthest point from the LTC1435.
7. SGND should be exclusively used for grounding exter-
nal components on C
OSC
, I
TH
, V
OSENSE
and SFB pins.
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