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參數(shù)資料
| 型號(hào)： | LTC1530C |
| 廠商： | Linear Technology Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Isolated Flyback Switching Regulator with 9V Output |
| 中文描述： | 隔離反激式開關(guān)穩(wěn)壓9V輸出 |
| 文件頁(yè)數(shù)： | 12/24頁(yè) |
| 文件大小： | 288K |
| 代理商： | LTC1530C |
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LTC1530
IRF7413 (both in SO-8) or Siliconix SUD50N03 or Motorola
MTD20N03HDL (both in DPAK) are small footprint sur-
face mount devices with R
DS(ON)
values below 0.03
at 5V
of V
GS
that work well in LTC1530 circuits. With higher
output voltages, the R
DS(ON)
of Q1 may need to be signifi-
cantly lower than that for Q2. These conditions can often
be met by paralleling two MOSFETs for Q1 and using a
single device for Q2. Using a higher P
MAX
value in the
R
DS(ON)
calculations generally decreases the MOSFET
cost and the circuit efficiency and increases the MOSFET
heat sink requirements.
In most LTC1530 applications, R
DS(ON)
is used as the
current sensing element. MOSFET R
DS(ON)
has a positive
temperature coefficient. Therefore, the LTC1530 I
MAX
sink
current is designed with a positive 3300ppm/
°
C tempera-
ture coefficient. The positive tempco of I
MAX
provides first
order correction for current limit vs temperature. There-
fore, current limit does not have to be set to an increased
level at room temperature to guarantee a desired output
current at elevated temperatures.
Table 1 highlights a variety of power MOSFETs that are
suitable for use in LTC1530 applications.
P
MAX
should be calculated based primarily on required
efficiency or allowable thermal dissipation. A high effi-
ciency buck converter designed for the Pentium
II with 5V
input and a 2.8V, 11.2A output might allow no more than
4% efficiency loss at full load for each MOSFET. Assuming
roughly 90% efficiency at this current level, this gives a
P
MAX
value of:
(2.8)(11.2A/0.9)(0.04) = 1.39W per FET
and a required R
DS(ON)
of:
(
(
R
V
W
V
A
R
V
W
V
V
A
DS ON Q
DS ON Q
.
1
2
2
2
5 1 39
2 8
11 2
0 020
5 1 39
5
2 8
11 2
0 025
=
)
=
=
)
)
=
Note that while the required R
DS(ON)
values suggest large
MOSFETs, the power dissipation numbers are only 1.39W
per device or less—large TO-220 packages and heat
sinks are not necessarily required in high efficiency appli-
cations. Siliconix Si4410DY or International Rectifier
RDS(ON)
AT 25
°
C
(
)
0.019
TYPICAL INPUT
CAPACITANCE
Ciss (pF)
3200
RATED CURRENT
(A)
15A at 25
°
C
10A at 100
°
C
10A at 25
°
C
8A at 75
°
C
20A at 25
°
C
16A at 100
°
C
11.5A at 25
°
C
75A at 25
°
C
59A at 100
°
C
56A at 25
°
C
40A at 100
°
C
50A at 25
°
C
36A at 100
°
C
35A at 25
°
C
θ
JC
(
°
C/W)
1.8
T
JMAX
(
°
C)
175
MANUFACTURER
Siliconix
PART NO.
SUD50N03-10
PACKAGE
TO-252
Siliconix
Si4410DY
SO-8
0.020
2700
—
150
ON Semiconductor
MTD20N03HDL
DPAK
0.035
880
1.67
150
Fairchild
ON Semiconductor
FDS6680
MTB75N03HDL*
SO-8
D
2
PAK
0.01
0.0075
2070
4025
25
1.0
150
150
IR
IRL3103S
D
2
PAK
0.014
1600
1.8
175
IR
IRLZ44
TO-220
0.028
3300
1.0
175
Fuji
Note: Please refer to the manufacturer’s data sheet for testing conditions and detailed information.
*Users must consider the power dissipation and thermal effects in the LTC1530 if driving external MOSFETs with high values of input capacitance.
Refer to the PV
CC
Supply Current vs GATE Capacitance in the Typical Performance Characteristics section.
2SK1388
TO-220
0.037
1750
2.08
150
Table 1. Recommended MOSFETs for LTC1530 Applications
APPLICATIOU
W
U
U
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