VIN = 2.7V to 10V, DVCC
參數(shù)資料
型號(hào): LTC1556CGN#PBF
廠商: Linear Technology
文件頁(yè)數(shù): 6/12頁(yè)
文件大小: 0K
描述: IC LEVEL TRANSLTOR W/LDO 20SSOP
標(biāo)準(zhǔn)包裝: 55
邏輯功能: 電平移位器
位數(shù): 1
輸入類(lèi)型: 電壓
輸出類(lèi)型: 電壓
通道數(shù): 1
輸出/通道數(shù)目: 1
差分 - 輸入:輸出: 無(wú)/無(wú)
傳輸延遲(最大): 18ns
電源電壓: 1.8 V ~ 5.5 V
工作溫度: 0°C ~ 70°C
封裝/外殼: 20-SSOP(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 20-SSOP
包裝: 管件
3
LTC1555/LTC1556
VIN = 2.7V to 10V, DVCC = 1.8V to 5.5V, controller digital pins tied to DVCC, SIM digital pins floating, EN, FB pins tied to GND
(LTC1556), C1 = 0.1
F, COUT = 10F unless otherwise specified.
ELECTRICAL CHARACTERISTICS
over the – 40
°C to 85°C temperature range by design or correlation, but
are not production tested.
Note 3: The DATA and I/O pull-down drivers must also sink current
sourced by the internal pull-up resistors.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VCC Short-Circuit Current
VCC Shorted to GND
q
12.5
40
mA
Auxiliary LDO VOUT (VLDO)
EN = High, VCC = 5V, FB = LDO, ILDO = 5mA (LTC1556)
q
4.00
4.3
4.55
V
Auxiliary Switch Resistance
EN = High, VCC = 5V, FB = GND (LTC1556)
q
18
30
FB Input Resistance
(LTC1556)
200
k
Charge Pump fOSC
q
500
650
800
kHz
Controller Inputs/Outputs, DVCC = 3V
Input Current (IIH, IIL)
M0, M1, SS, RIN, CIN
q
–1
1
A
DDRV, EN
q
–5
5
A
High Level Input Current (IIH)
DATA
q
–20
20
A
Low Level Input Current (IIL)
DATA
q
1mA
High Input Voltage Threshold (VIH)
M0, M1, RIN, CIN, DDRV, EN
q
0.7
× DVCC
V
DATA
q
DVCC – 0.6
V
Low Input Voltage Threshold (VIL)
M0, M1, RIN, CIN, DDRV, EN
q
0.2
× DVCC
V
DATA
q
0.4
V
High Level Output Voltage (VOH)
DATA Source Current = 20
A, I/O = VCC
q
0.7
× DVCC
V
Low Level Output Voltage (VOL)
DATA Sink Current = – 200
A, I/O = 0V (Note 3)
q
0.4
V
DATA Pull-up Resistance
Between DATA and DVCC
q
13
20
28
k
DATA Output Rise/Fall Time
DATA Loaded with 30pF
q
1.3
2
s
SIM Inputs/Outputs, DVCC = 3V, VCC = 3V or 5V
I/O High Input Voltage Threshold (VIH)IIH(MAX) = ±20A
q
0.5
× VCC 0.7 × VCC
V
I/O Low Input Voltage Threshold (VIL)IIL(MAX) = 1mA
q
0.4
V
High Level Output Voltage (VOH)
I/O, Source Current = 20
A, DATA or DDRV = DVCC
q
0.8
× VCC
V
RST, CLK, Source Current = 20
A
q
0.9
× VCC
V
Low Level Output Voltage (VOL)
I/O, Sink Current = – 1mA, DATA or DDRV = 0V (Note 3)
q
0.4
V
RST, CLK, Sink Current = – 200
A
q
0.4
V
I/O Pull-Up Resistance
Between I/O and VCC
q
6.5
10
14
k
SIM Timing Parameters, DVCC = 3V, VCC = 5V
CLK Rise/Fall Time
CLK Loaded with 30pF
q
18
ns
RST, I/O Rise/Fall Time
RST, I/O Loaded with 30pF
q
1
s
CLK Frequency
CLK Loaded with 30pF
q
5
MHz
VCC Turn-On Time
SS = DVCC, COUT = 10F, IVCC = 0
1
ms
SS = 0V, COUT = 10F, IVCC = 0
6
ms
VCC Discharge Time to 1V
IVCC = 0, VCC = 5V, COUT = 10F3
ms
The q denotes specifications which apply over the specified temperature
range.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: C grade device specifications are guaranteed over the 0
°C to 70°C
temperature range. In addition, C grade device specifications are assured
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