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參數(shù)資料
| 型號： | LTC1556CGN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SIM Power Supply and Level Translator |
| 中文描述： | SWITCHED CAPACITOR REGULATOR, 800 kHz SWITCHING FREQ-MAX, PDSO20 |
| 封裝： | 0.150 INCH, PLASTIC, SSOP-20 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 255K |
| 代理商： | LTC1556CGN |
3
LTC1555/LTC1556
V
IN
= 2.7V to 10V, DV
CC
= 1.8V to 5.5V, controller digital pins tied to DV
CC
, SIM digital pins floating, EN, FB pins tied to GND
(LTC1556), C1 = 0.1
μ
F, C
OUT
= 10
μ
F unless otherwise specified.
ELECTRICAL CHARACTERISTICS
over the –40
°
C to 85
°
C temperature range by design or correlation, but
are not production tested.
Note 3:
The DATA and I/O pull-down drivers must also sink current
sourced by the internal pull-up resistors.
PARAMETER
V
CC
Short-Circuit Current
Auxiliary LDO V
OUT
(V
LDO
)
Auxiliary Switch Resistance
FB Input Resistance
Charge Pump f
OSC
Controller Inputs/Outputs, DV
CC
= 3V
Input Current (I
IH
, I
IL
)
CONDITIONS
V
CC
Shorted to GND
EN = High, V
CC
= 5V, FB = LDO, I
LDO
= 5mA (LTC1556)
EN = High, V
CC
= 5V, FB = GND (LTC1556)
(LTC1556)
MIN
TYP
12.5
4.3
18
200
650
MAX
40
4.55
30
UNITS
mA
G
G
4.00
V
G
k
kHz
G
500
800
M0, M1, SS, RIN, CIN
DDRV, EN
DATA
DATA
M0, M1, RIN, CIN, DDRV, EN
DATA
M0, M1, RIN, CIN, DDRV, EN
DATA
DATA Source Current = 20
μ
A, I/O = V
CC
DATA Sink Current = –200
μ
A, I/O = 0V (Note 3)
Between DATA and DV
CC
DATA Loaded with 30pF
G
G
–1
–5
–20
1
5
μ
A
μ
A
μ
A
mA
High Level Input Current (I
IH
)
Low Level Input Current (I
IL
)
High Input Voltage Threshold (V
IH
)
G
20
1
G
G
G
0.7
×
DV
CC
DV
CC
– 0.6
V
V
V
V
V
V
Low Input Voltage Threshold (V
IL
)
G
G
0.2
×
DV
CC
0.4
0.7
×
DV
CC
High Level Output Voltage (V
OH
)
Low Level Output Voltage (V
OL
)
DATA Pull-up Resistance
DATA Output Rise/Fall Time
SIM Inputs/Outputs, DV
CC
= 3V, V
CC
= 3V or 5V
I/O High Input Voltage Threshold (V
IH
)
I/O Low Input Voltage Threshold (V
IL
)
High Level Output Voltage (V
OH
)
G
G
0.4
28
2
G
13
20
1.3
k
μ
s
G
I
IH(MAX)
=
±
20
μ
A
I
IL(MAX)
= 1mA
I/O, Source Current = 20
μ
A, DATA or DDRV = DV
CC
RST, CLK, Source Current = 20
μ
A
I/O, Sink Current = –1mA, DATA or DDRV = 0V (Note 3)
RST, CLK, Sink Current = –200
μ
A
Between I/O and V
CC
G
0.5
×
V
CC
0.7
×
V
CC
V
V
V
V
V
V
G
0.4
G
G
0.8
×
V
CC
0.9
×
V
CC
Low Level Output Voltage (V
OL
)
G
G
0.4
0.4
14
I/O Pull-Up Resistance
SIM Timing Parameters, DV
CC
= 3V, V
CC
= 5V
CLK Rise/Fall Time
RST, I/O Rise/Fall Time
CLK Frequency
V
CC
Turn-On Time
G
6.5
10
k
CLK Loaded with 30pF
RST, I/O Loaded with 30pF
CLK Loaded with 30pF
SS = DV
CC
, C
OUT
= 10
μ
F, I
VCC
= 0
SS = 0V, C
OUT
= 10
μ
F, I
VCC
= 0
I
VCC
= 0, V
CC
= 5V, C
OUT
= 10
μ
F
G
18
1
5
ns
μ
s
G
G
MHz
ms
ms
ms
1
6
3
V
CC
Discharge Time to 1V
The
G
denotes specifications which apply over the specified temperature
range.
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
C grade device specifications are guaranteed over the 0
°
C to 70
°
C
temperature range. In addition, C grade device specifications are assured
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