4
LTC1608
POWER REQUIRE E TS
W
U
The q denotes specifications that apply over the full operating temperature range,
otherwise specifications are at TA = 25°C. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VDD
Positive Supply Voltage
(Notes 12, 13)
4.75
5.25
V
VSS
Negative Supply Voltage
(Note 12)
– 4.75
– 5.25
V
IDD
Positive Supply Current
CS = RD = 0V
q
22
35
mA
Nap Mode
CS = 0V, SHDN = 0V
1.5
2.4
mA
Sleep Mode
CS = 5V, SHDN = 0V
1
100
A
ISS
Negative Supply Current
CS = RD = 0V
q
32
49
mA
Nap Mode
CS = 0V, SHDN = 0V
1
100
A
Sleep Mode
CS = 5V, SHDN = 0V
1
100
A
PD
Power Dissipation
CS = RD = 0V
q
270
420
mW
Nap Mode
CS = 0V, SHDN = 0V
7.5
12
mW
Sleep Mode
CS = 5V, SHDN = 0V
0.01
1
mW
TI I G CHARACTERISTICS
U
W
The q denotes specifications that apply over the full operating temperature range,
otherwise specifications are at TA = 25°C. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
fSMPL(MAX)
Maximum Sampling Frequency
q
500
600
kHz
tCONV
Conversion Time
q
1.0
1.45
1.8
s
tACQ
Acquisition Time
(Notes 11, 14)
q
400
ns
tACQ+CONV(MIN) Throughput Time (Acquisition + Conversion)
q
1.67
2
s
t1
CS to RD Setup Time
(Notes 11, 12, 15)
q
0ns
t2
CS
↓ to CONVST↓ Setup Time
(Notes 11, 12)
q
10
ns
t3
SHDN
↓ to CS↑ Setup Time
(Notes 11, 12)
q
10
ns
t4
SHDN
↑ to CONVST↓ Wake-Up Time
CS = Low (Note 12)
400
ns
t5
CONVST Low Time
(Note 12)
q
40
ns
t6
CONVST to BUSY Delay
CL = 25pF
36
ns
q
80
ns
t7
Data Ready Before BUSY
↑
60
ns
q
32
ns
t8
Delay Between Conversions
(Note 12)
q
200
ns
t9
Wait Time RD
↓ After BUSY↑
(Note 12)
q
–5
ns
t10
Data Access Time After RD
↓
CL = 25pF
25
40
ns
q
50
ns
CL = 100pF (Note 11)
45
60
ns
q
75
ns
t11
Bus Relinquish Time
30
50
ns
q
60
ns
t12
RD Low Time
(Note 12)
q
t10
ns
t13
CONVST High Time
(Note 12)
q
40
ns
t14
Aperture Delay of Sample-and-Hold
2
ns
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All voltage values are with respect to ground with DGND, OGND
and AGND wired together unless otherwise noted.
Note 3: When these pin voltages are taken below VSS or above VDD, they
will be clamped by internal diodes. This product can handle input currents
greater than 100mA below VSS or above VDD without latchup.