- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377761 > LTC1693-3CMS8 (LINEAR TECHNOLOGY CORP) High Speed Single/Dual MOSFET Drivers PDF資料下載
參數(shù)資料
| 型號： | LTC1693-3CMS8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Speed Single/Dual MOSFET Drivers |
| 中文描述： | 1.5 A BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MSOP-8 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 150K |
| 代理商： | LTC1693-3CMS8 |
6
LTC1693-5
APPLICATIO
S I
N
FOR
ATIO
U
Overview
The LTC1693-5 single driver allows 3V- or 5V-based digi-
tal circuits to drive power P-channel MOSFETs at high
speeds. A power MOSFET’s gate-charge loss increases with
switching frequency and transition time. The LTC1693-5
is capable of driving a 1nF load with 16ns rise and fall times
using a V
CC
of 12V. This eliminates the need for higher
voltage supplies, such as 18V, to reduce the gate charge
losses.
The LTC1693-5’s 360
μ
A quiescent current is an order of
magnitude lower than most other drivers/buffers. This
improves system efficiency in both standby and switching
operation. Since a power MOSFET generally accounts for
the majority of power loss in a converter, addition of the
LT1693-5 to a high power converter design greatly im-
proves efficiency, using very little board space.
W
U
Input Stage
The LTC1693-5 employs 3V CMOS compatible input thresh-
olds that allow a low voltage digital signal to drive standard
power P-channel MOSFETs. The LTC1693-5 incorporates
a 4V internal regulator to bias the input buffer. This allows
the 3V CMOS compatible input thresholds (V
IH
= 2.6V, V
IL
= 1.4V) to be independent of variations in V
CC
. The 1.2V
hysteresis between V
IH
and V
IL
eliminates false triggering
due to ground noise during switching transitions. The
LTC1693-5’s input buffer has a high input impedance and
draws less than 10
μ
A during standby.
Output Stage
The LTC1693-5’s output stage is essentially a CMOS
inverter, as shown by the P- and N-channel MOSFETs in
Figure 1 (P1 and N1). The CMOS inverter swings rail-to-
rail, giving maximum voltage drive to the load. This large
voltage swing is important in driving external power
P-channel MOSFETs, whose R
DS(ON)
is inversely propor-
tional to its gate overdrive voltage (V
GS
– V
T
).
P1
C
GS
POWER
MOSFET
C
GD
OUT
GND
LTC1693-5
LOAD
1693-5 F01
N1
V
CC
Figure 1. Capacitance Seen by OUT During Switching
The LTC1693-5’s peak output currents are 1.4A (P1) and
1.7A (N1) respectively. The N-channel MOSFET (N1) has
higher current drive capability so it can charge the power
MOSFET’s gate capacitance during high-to-low signal
transitions. When the power MOSFET’s gate is pulled high
by the LTC1693-5, its drain voltage is pulled low by its load
(e.g., a resistor or inductor). The slew rate of the drain
voltage causes current to flow back to the MOSFETs gate
through its gate-to-drain capacitance. If the MOSFET
driver does not have sufficient source current capability
(low output impedance), the current through the power
MOSFET’s Miller capacitance (C
GD
) can momentarily pull
the gate low, turning the MOSFET back on.
Rise/Fall Time
Since the power MOSFET generally accounts for the ma-
jority of power lost in a converter, it’s important to quickly
turn it either fully “on” or “off” thereby minimizing the tran-
sition time in its linear region. The LTC1693-5 has rise and
fall times on the order of 16ns, delivering about 1.4A to 1.7A
of peak current to a 1nF load with a V
CC
of only 12V.
The LTC1693-5 rise and fall times are determined by the
peak current capabilities of P1 and N1. The predriver,
shown in Figure 1 driving P1 and N1, uses an adaptive
method to minimize cross-conduction currents. This is
done with a 6ns nonoverlapping transition time. N1 is fully
turned off before P1 is turned-on and vice-versa using this
6ns buffer time. This minimizes any cross-conduction
currents while N1 and P1 are switching on and off yet is
short enough to not prolong their rise and fall times.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1693-5 | High Speed Single P-Channel MOSFET Driver |
| LTC1693 | RSD Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 09V; Power: 1W; 1kVDC and 3kVDC Isolation Options; Approved for Medical Applications; Suitable for Automated Assembly; 8, 10 and 12 pin Pinning Style Options; Optional Continuous Short Circuit Protected; Efficiency to 85% |
| LTC1694CS5 | SMBus/I2C Accelerator |
| LTC1694-1 | SMBus/I2C Accelerator |
| LTC1694-1CS5 | SMBus/I2C Accelerator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1693-3CMS8#PBF | 功能描述:IC MOSFET DVR N-CH SINGLE 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1693-3CMS8#TR | 功能描述:IC DRIVER MOSF SGL N-CH HS 8MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1693-3CMS8#TRPBF | 功能描述:IC MOSFET DVR N-CH SINGLE 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1693-5CMS8 | 功能描述:IC MOSFET DVR P-CH SINGLE 8-MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1693-5CMS8#PBF | 功能描述:IC MOSFET DVR P-CH SINGLE 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。