參數(shù)資料
型號(hào)： LTC1960
廠商： Linear Technology Corporation
英文描述： 4A, High Efficiency, Standalone Li Battery Charger
中文描述： 第4A，高效，獨(dú)立鋰電池充電器
文件頁(yè)數(shù)： 15/20頁(yè)
文件大?。?/td> 241K
代理商： LTC1960
15
LTC4007
4007i
The MOSFET power dissipations at maximum output
current are given by:
PMAIN = V
OUT
/V
IN
(I
MAX
)
2
(1 +
δ
T)R
DS(ON)
+ k(V
IN
)
2
(I
MAX
)(C
RSS
)(f
OSC
)
PSYNC = (V
IN
– V
OUT
)/V
IN
(I
MAX
)
2
(1 +
δ
T)R
DS(ON)
Where
δ
T is the temperature dependency of R
DS(ON)
and
k is a constant inversely related to the gate drive current.
Both MOSFETs have I
2
R losses while the PMAIN equation
includes an additional term for transition losses, which are
highest at high input voltages. For V
IN
< 20V the high
current efficiency generally improves with larger MOSFETs,
while for V
IN
> 20V the transition losses rapidly increase
to the point that the use of a higher R
DS(ON)
device with
lower C
RSS
actually provides higher efficiency. The syn-
chronous MOSFET losses are greatest at high input volt-
age or during a short circuit when the duty cycle in this
switch in nearly 100%. The term (1 +
δ
T) is generally
given for a MOSFET in the form of a normalized R
DS(ON)
vs
temperature curve, but
δ
= 0.005/
°
C can be used as an
approximation for low voltage MOSFETs. C
RSS
= Q
GD
/
V
DS
is usually specified in the MOSFET characteristics. The
constant k = 2 can be used to estimate the contributions of
the two terms in the main switch dissipation equation.
If the charger is to operate in low dropout mode or with a
high duty cycle greater than 85%, then the topside
P-channel efficiency generally improves with a larger
MOSFET. Using asymmetrical MOSFETs may achieve cost
savings or efficiency gains.
The Schottky diode D1, shown in the Typical Application
on the back page, conducts during the dead-time between
the conduction of the two power MOSFETs. This prevents
the body diode of the bottom MOSFET from turning on and
storing charge during the dead-time, which could cost as
much as 1% in efficiency. A 1A Schottky is generally a
good size for 4A regulators due to the relatively small
average current. Larger diodes can result in additional
transition losses due to their larger junction capacitance.
The diode may be omitted if the efficiency loss can be
tolerated.
APPLICATIOU
W
U
U
Figure 8. Adapter Current Limiting
Calculating IC Power Dissipation
The power dissipation of the LTC4007 is dependent upon
the gate charge of the top and bottom MOSFETs (QG1 &
QG2 respectively) The gate charge is determined from the
manufacturer’s data sheet and is dependent upon both the
gate voltage swing and the drain voltage swing of the
MOSFET. Use 6V for the gate voltage swing and V
DCIN
for
the drain voltage swing.
PD = V
DCIN
(f
OSC
(QG1 + QG2) + I
Q
)
Example:
V
DCIN
= 19V, f
OSC
= 345kHz, QG1 = QG2 = 15nC.
PD = 235mW
Adapter Limiting
An important feature of the LTC4007 is the ability to
automatically adjust charging current to a level which
avoids overloading the wall adapter. This allows the prod-
uct to operate at the same time that batteries are being
charged without complex load management algorithms.
Additionally, batteries will automatically be charged at the
maximum possible rate of which the adapter is capable.
This feature is created by sensing total adapter output
current and adjusting charging current downward if a
preset adapter current limit is exceeded. True analog
control is used, with closed-loop feedback ensuring that
adapter load current remains within limits. Amplifier CL1
in Figure 8 senses the voltage across R
CL
, connected
100mV
–
+
5k
CLP
LTC4007
18
CLN
19
4007 F08
15nF
+
R
CL
*
C
IN
V
IN
CL1
AC ADAPTER
INPUT
*R
CL
=
100mV
ADAPTER CURRENT LIMIT
+
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