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參數(shù)資料
| 型號： | LTC3410BESC6-1.8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.63 A SWITCHING REGULATOR, 2700 kHz SWITCHING FREQ-MAX, PDSO6 |
| 封裝： | PLASTIC, MO-203AB, SC-70, 6 PIN |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 285K |
| 代理商： | LTC3410BESC6-1.8 |
3
LTC3410B
3410bfa
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Efficiency vs Input Voltage
Efficiency vs Output Current
(From Figure 1 Except for the Resistive Divider Resistor Values)
INPUT VOLTAGE (V)
2.5
EFFICIENCY
(%)
50
60
70
4
5
3410 G01
40
30
20
3
3.5
4.5
80
90
100
5.5
IOUT = 250mA
IOUT = 10mA
IOUT = 1mA
VOUT = 1.2V
IOUT = 100mA
Reference Voltage vs
Temperature
TEMPERATURE (
°C)
–50
REFERENCE
VOLTAGE
(V)
0.804
0.809
0.814
25
75
3410 G03
0.799
0.794
–25
0
50
100
125
0.789
0.784
VIN = 3.6V
OUTPUT CURRENT (mA)
1
40
EFFICIENCY
(%)
50
60
70
80
10
100
1000
3410 G02
30
20
10
0
90
100
VOUT = 1.8V
VIN = 2.7V
VIN = 3.6V
VIN = 4.2V
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
IS
Input DC Bias Current
(Note 4)
Operating
VFB = 0.83V or VOUT = 104%, ILOAD = 0A
200
300
A
Shutdown
VRUN = 0V
0.1
1
A
fOSC
Oscillator Frequency
VFB = 0.8V or VOUT = 100%
●
1.8
2.25
2.7
MHz
VFB = 0V or VOUT = 0V
310
kHz
RPFET
RDS(ON) of P-Channel FET
ISW = 100mA
0.75
0.9
RNFET
RDS(ON) of N-Channel FET
ISW = –100mA
0.55
0.7
ILSW
SW Leakage
VRUN = 0V, VSW = 0V or 5V, VIN = 5V
±0.01
±1
A
VRUN
RUN Threshold
●
0.3
1
1.5
V
IRUN
RUN Leakage Current
●
±0.01
±1
A
The
● denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C.
VIN = 3.6V unless otherwise specified.
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3410BE is guaranteed to meet performance specifications
from 0
°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula:
LTC3410B: TJ = TA + (PD)(250°C/W)
Note 4: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 5: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. Junction
temperature will exceed 125
°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
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