VGSMAX – VGSARM Differen" />
參數(shù)資料
型號: LTC4213IDDB#TRMPBF
廠商: Linear Technology
文件頁數(shù): 14/20頁
文件大?。?/td> 0K
描述: IC CIRC BREAK ELEC 8-DFN
標準包裝: 1
系列: *
其它名稱: LTC4213IDDB#TRMPBFDKR
LTC4213
3
4213f
VGSMAX – VGSARM
Difference Between VGSMAX and
VSENSEN = 0, VCC ≥ 2.97V
0.3
1.1
V
VGSARM
VSENSEN = 0, VCC = 2.3V
0.15
0.8
V
VREADY(OL)
READY Pin Output Low Voltage
IREADY = 1.6mA, Pull Down Device On
0.2
0.4
V
IREADY(LEAK)
READY Pin Leakage Current
VREADY = 5V, Pull Down Device Off
0
±1
A
VON(TH)
ON Pin High Threshold
ON Rising, GATE Pulls Up
0.76
0.8
0.84
V
VON(HYST)
ON Pin Hysteresis
ON Falling, GATE Pulls Down
10
40
90
mV
VON(RST)
ON Pin Reset Threshold
ON Falling, Fault Reset, GATE Pull Down
0.36
0.4
0.44
V
ION(IN)
ON Pin Input Current
VON = 1.2V
0
±1
A
VOV
Overvoltage Threshold
0.41
0.7
1.1
V
VOV = VSENSEP – VCC
tOV
Overvoltage Protection Trip Time
VSENSEP = VSENSEN = Step 5V to 6.2V
25
65
160
s
tFAULT(SLOW)
VCB Trips to GATE Discharging
VSENSE Step 0mV to 50mV,
716
27
s
VSENSEN Falling, VCC = VSENSEP = 5V
tFAULT(FAST)
VCB(FAST) Trips to GATE Discharging
VSENSE Step 0V to 0.3V, VSENSEN Falling,
1
2.5
s
VSENSEP = 5V
tDEBOUNCE
Startup De-Bounce Time
VON = 0V to 2V Step to Gate Rising,
27
60
130
s
(Exiting Reset Mode)
tREADY
READY Delay Time
VGATE = 0V to 8V Step to READY Rising,
22
50
115
s
VSENSEP = VSENSEN = 0
tOFF
Turn-Off Time
VON = 2V to 0.6V Step to GATE Discharging
1.5
5
10
s
tON
Turn-On Time
VON = 0.6V to 2V Step to GATE Rising,
4
8
16
s
(Normal Mode)
tRESET
Reset Time
VON Step 2V to 0V
20
80
150
s
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 5V, ISEL = 0 unless otherwise noted. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to ground unless otherwise
specified.
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