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參數資料
| 型號： | LTC4361IDC-1#TRMPBF |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封裝： | 2 X 2 MM, LEAD FREE, PLASTIC, DFN-8 |
| 文件頁數： | 16/16頁 |
| 文件大?。?/td> | 327K |
| 代理商： | LTC4361IDC-1#TRMPBF |
LTC4361-1/LTC4361-2
9
436112fa
APPLICATIONS INFORMATION
ON Input
ON is a CMOS compatible, active low enable input. It has
a default 5μA pull-down to ground. Connect this pin to
ground or leave open to enable normal device operation.
If it is driven high while the external MOSFET is turned on,
GATE is pulled low with a weak pull-down current (40μA)
to turn off the external MOSFET gradually, minimizing input
voltage transients. The LTC4361 then goes into a low cur-
rent sleep mode, drawing only 1.5μA at IN. When ON goes
back low, the part restarts with a 130ms delay cycle.
GATEP Control
GATEP has a 2M resistive pull-down to ground and a 5.8V
Zener clamp in series with a 200k resistor to IN. It con-
trols the gate of an optional external P-channel MOSFET
to provide negative voltage protection. The 2M resistive
pull-down turns on the MOSFET once VIN – VGATEP is
more than the MOSFET gate threshold voltage. The IN to
GATEP Zener protects the MOSFET from gate overvoltage
by clamping its VGS to 5.8V when VIN goes high.
MOSFET Congurations and Selection
The LTC4361 can be used with various external MOSFET
congurations (see Figure 3). The simplest conguration
is a single N-channel MOSFET. It has the lowest RDS(ON)
and voltage drop and is thus the most power efcient
solution. When GATE is pulled to ground, the N-channel
MOSFET can isolate OUT from a positive voltage at IN up
to the BVDSS of the N-channel MOSFET. However, reverse
current can still ow from OUT to IN via the parasitic body
diode of the N-channel MOSFET.
For near zero reverse-leakage current protection when GATE
is pulled to ground, back-to-back N-channel MOSFETs
can be used. Adding an additional P-channel MOSFET
controlled by GATEP provides negative input voltage
protection down to the BVDSS of the P-channel MOSFET.
Another conguration consists of a P-channel MOSFET
controlled by GATEP and a N-channel MOSFET controlled
by GATE. This provides protection against overvoltage and
negative voltage but not reverse current.
Figure 3. MOSFET Congurations
GATEP
OVERVOLTAGE, REVERSE-
CURRENT PROTECTION
NEGATIVE
VOLTAGE
PROTECTION
GATE
OVERVOLTAGE, REVERSE-
CURRENT PROTECTION
GATE
GATEP
SUPPLY
436112 F03
OVERVOLTAGE
PROTECTION
OVERVOLTAGE
PROTECTION
M1
M3
M1
M2
M1
M2
M3
NEGATIVE
VOLTAGE
PROTECTION
GATE
OUT
IN
RSENSE
SENSE
OUT
IN
RSENSE
SENSE
IN
RSENSE
SENSE
IN
RSENSE
SENSE
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