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參數(shù)資料
| 型號(hào)： | LTC4413EDD |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | Dual 2.6A, 2.5V to 5.5V, Ideal Diodes in 3mm 3mm DFN |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO10 |
| 封裝： | 3 X 3 MM, 0.75 MM HEIGHT, PLASTIC, MO-229WEED-2, DFN-10 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 154K |
| 代理商： | LTC4413EDD |
8
LTC4413
4413f
OPERATIOU
The LTC4413 is described with the aid of the Block
Diagram (Figure 1). Operation begins when the power
source at V
INA
or V
INB
rises above the undervoltage
lockout (UVLO) voltage of 2.4V and either of the ENBA or
ENBB control pins is low. If only the voltage at the V
INA
pin
is present, the power source to the LTC4413 (V
DD
) will be
supplied from the V
INA
pin. The amplifier (A) will pull a
current proportional to the difference between V
INA
and
V
OUTA
from the gate (V
GATEA
) of the internal PFET (PA),
driving this gate voltage below V
INA
. This will turn on PA.
As V
OUTA
is pulled up to a forward voltage drop (V
FWD
) of
20mV below V
INA
, the LTC4413 will regulate V
GATEA
to
maintain the small forward voltage drop. The system is
now in forward regulation and the load at V
OUTA
will be
powered from the supply at V
INA
. As the load current
varies, V
GATEA
will be controlled to maintain V
FWD
until the
load current exceeds the transistor’s (PA) ability to deliver
the current as V
GATEA
approaches GND. At this point the
PFET will behave as a fixed resistor with resistance R
ON
,
whereby the forward voltage will increase slightly with
increased load current. As the magnitude of I
OUT
increases
further (such that I
LOAD
> I
OC
), the LTC4413 will fix the load
current to the constant value I
OC
to protect the device. The
characteristics for parameters R
FWD
, R
ON
, V
FWD
and I
OC
are specified with the aid of Figure 2, illustrating the
LTC4413 forward voltage drop versus that of a Schottky
diode.
If another supply is provided at V
INB
, the LTC4413 will
likewise regulate the gate voltage on PB to maintain the
output voltage V
OUTB
just below the input voltage V
INB
. If
this alternate supply, V
INB
, exceeds the voltage at V
INA
, the
LTC4413 will select this input voltage as the internal
supply (V
DD
). This second ideal diode operates indepen-
dently of the first ideal diode function.
When an alternate power source is connected to the load
at V
OUTA
(or V
OUTB
), the LTC4413 will sense the increased
voltage at V
OUTA
and amplifier A will increase the voltage
V
GATEA
, reducing the current through PA. When V
OUTA
is
higher than V
INA
+ V
RTO
, V
GATEA
will be pulled up to V
DD
,
which will turn off PA. The internal power source for the
LTC4413 (V
DD
) will then be diverted to source current
from the V
OUTA
pin, only if V
OUTA
is larger than V
INB
(or
V
OUTB
). The system is now in the reverse turn-off mode.
Power to the load is being delivered from an alternate
supply and only a small current is drawn from V
INA
to
sense the potential at V
INA
.
When the selected channel of the LTC4413 is in reverse
turn-off mode or both channels are disabled, the STAT pin
will sink 9
μ
A of current (I
SON
) if connected.
Channel selection is accomplished using the two ENB
pins, ENBA and ENBB. When the ENBA input is asserted
(high), PA will have its gate voltage pulled to V
DD
at a
controlled rate, limiting the turn-off time to avoid voltage
spiking at the input when being driven by an inductive
source impedance. A 3
μ
A pull-down current on the ENB
pins will ensure a low level at these inputs if left floating.
Overcurrent and Short-Circuit Protection
During an overcurrent condition, the output voltage will
droop as the load current exceeds the amount of current
that the LTC4413 can supply. At the time when an over-
current condition is first detected, the LTC4413 will take
some time to detect this condition before reducing the
current to I
MAX
. For short durations after the output is
shorted, the current may exceed I
MAX
. The magnitude of
this peak short-circuit current can be large, depending on
the load current immediately before the short circuit
Figure 2
FORWARD VOLTAGE (V)
0
0
C I
FWD
I
OC
SLOPE
1/R
ON
SLOPE
1/R
FWD
LTC4413
SCHOTTKY
DIODE
4413 F02
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC4413EDD#PBF | 功能描述:IC IDEAL DIODE DUAL 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時(shí)間 - 開啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LTC4413EDD#PBF | 制造商:Linear Technology 功能描述:Power Management ICs |
| LTC4413EDD#TR | 制造商:Linear Technology 功能描述:Dual Ideal Diodes 10-Pin DFN EP T/R |
| LTC4413EDD#TRPBF | 功能描述:IC IDEAL DIODE DUAL 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時(shí)間 - 開啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LTC4413EDD-1#PBF | 功能描述:IC IDEAL DIODE DUAL 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時(shí)間 - 開啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
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