- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377779 > LTC4440ES6 (LINEAR TECHNOLOGY CORP) High Speed, High Voltage High Side Gate Driver PDF資料下載
參數(shù)資料
| 型號(hào)： | LTC4440ES6 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Speed, High Voltage High Side Gate Driver |
| 中文描述： | 2.4 A BUF OR INV BASED MOSFET DRIVER, PDSO6 |
| 封裝： | PLASTIC, MO-193, SOT-23, 6 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | LTC4440ES6 |
8
LTC4440
4440i
Rise/Fall Time
Since the power MOSFET generally accounts for the
majority of the power loss in a converter, it is important to
quickly turn it on or off, thereby minimizing the transition
time in its linear region. The LTC4440 can drive a 1nF load
with a 10ns rise time and 7ns fall time.
The LTC4440’s rise and fall times are determined by the
peak current capabilities of Q1 and N1. The predriver that
drives Q1 and N1 uses a nonoverlapping transition scheme
to minimize cross-conduction currents. N1 is fully turned
off before Q1 is turned on and vice versa.
Power Dissipation
To ensure proper operation and long-term reliability, the
LTC4440 must not operate beyond its maximum tempera-
ture rating. Package junction temperature can be calcu-
lated by:
T
J
= T
A
+ PD (
θ
JA
)
where:
T
J
= Junction Temperature
T
A
= Ambient Temperature
PD = Power Dissipation
θ
JA
= Junction-to-Ambient Thermal Resistance
Power dissipation consists of standby and switching
power losses:
PD = P
STDBY
+ P
AC
where:
P
STDBY
= Standby Power Losses
P
AC
= AC Switching Losses
The LTC4440 consumes very little current during standby.
The DC power loss at V
CC
= 12V and V
BOOST–TS
= 12V is
only (250
μ
A + 110
μ
A)(12V) = 4.32mW.
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capacitive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance
during switching. Load losses for the output driver driving
a pure capacitive load C
OUT
would be:
Load Capacitive Power = (C
OUT
)(f)(V
BOOST–TS
)
2
The power MOSFET’s gate capacitance seen by the driver
output varies with its V
GS
voltage level during switching.
A power MOSFET’s capacitive load power dissipation can
be calculated using its gate charge, Q
G
. The Q
G
value
corresponding to the MOSFET’s V
GS
value (V
CC
in this
case) can be readily obtained from the manufacturer’s Q
G
vs V
GS
curves:
Load Capacitive Power (MOS) = (V
BOOST–TS
)(Q
G
)(f)
Transition state power losses are due to both AC currents
required to charge and discharge the driver’s internal
nodal capacitances and cross-conduction currents in the
internal gates.
Undervoltage Lockout (UVLO)
The LTC4440 contains both low side and high side under-
voltage lockout detectors that monitor V
CC
and the
bootstrapped supply V
BOOST–TS
. When V
CC
falls below
6.2V, the internal buffer is disabled and the output pin OUT
is pulled down to TS. When V
BOOST – TS
falls below 6.9V,
OUT is pulled down to TS. When both supplies are under-
voltage, OUT is pulled low to TS and the chip enters a low
current mode, drawing approximately 25
μ
A from V
CC
and
86
μ
A from BOOST.
APPLICATIOU
W
U
U
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC4441 | N-Channel MOSFET Gate Driver |
| LTC4441ES8-1 | N-Channel MOSFET Gate Driver |
| LTC4441IS8-1 | N-Channel MOSFET Gate Driver |
| LTC4441-1 | RV Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 24V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; EN and UL Safety Certificates; 6kVDC Isolation; Skinny DIP24 Package; Optional Continuous Short Circuit Protected; Fully Encapsulated; Very Low Isolation Capacitance |
| LTC4441EMSE | N-Channel MOSFET Gate Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC4440ES6#PBF | 制造商:Linear Technology 功能描述:MOSFET DRVR 2.4A 1-OUT Hi Side Full Brdg Non-Inv 6-Pin TSOT-23 制造商:Linear Technology 功能描述:IC MOSFET DRVR 制造商:Linear Technology 功能描述:IC, MOSFET DRVR; Device Type:MOSFET; Module Configuration:High Side; Peak Output Current:2.4A; Supply Voltage Min:12V; Supply Voltage Max:80V; Driver Case Style:SOT-23; No. of Pins:6; Input Delay:30ns; Output Delay:28ns ;RoHS Compliant: Yes |
| LTC4440ES6#TR | 功能描述:IC DRIVER HIGHSIDE HS/HV SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
| LTC4440ES6#TRM | 功能描述:IC HIGH-SIDE DVR HS HV SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
| LTC4440ES6#TRMPBF | 功能描述:IC HIGH-SIDE DVR HS HV SOT23-6 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān) 系列:- 其它有關(guān)文件:VND5E050AK-E View All Specifications 產(chǎn)品培訓(xùn)模塊:VIPower™ M0-5 Smart Power Devices 標(biāo)準(zhǔn)包裝:1,000 系列:VIPower™ 類型:高端 輸入類型:非反相 輸出數(shù):2 導(dǎo)通狀態(tài)電阻:50 毫歐 電流 - 輸出 / 通道:19A 電流 - 峰值輸出:27A 電源電壓:4.5 V ~ 28 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:24-SOP（0.295"，7.50mm 寬）裸露焊盤 供應(yīng)商設(shè)備封裝:PowerSSO-24 包裝:帶卷 (TR) 其它名稱:497-11699-2VND5E050AKTR-E-ND |
| LTC4440ES6#TRPBF | 功能描述:IC HIGH-SIDE DVR HS HV SOT23-6 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。