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參數(shù)資料
| 型號(hào)： | LTC4441-1 |
| 廠商： | Linear Technology Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RV Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 24V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; EN and UL Safety Certificates; 6kVDC Isolation; Skinny DIP24 Package; Optional Continuous Short Circuit Protected; Fully Encapsulated; Very Low Isolation Capacitance |
| 中文描述： | N溝道MOSFET柵極驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | LTC4441-1 |
9
44411f
LTC4441/LTC4441-1
BLANK
SGND
RBLANK
POWER
MOSFET
R4
LOAD
INDUCTOR
TO
SWITCHING
CONTROLLER’S
CURRENT
SENSE
INPUT
SENSE
+
OUT
LTC4441
V
IN
R3
4441 F03
SENSE
–
KEEP THIS
TRACE SHORT
MB
DRIVER
LEADING
EDGE DELAY
R7
PGND
inductor or resistor). The slew rate of the drain voltage
causes current to flow to the MOSFET’s gate through its
gate-to-drain capacitance. If the MOSFET driver does not
have sufficient sink current capability (low output imped-
ance), the current through the power MOSFET’s C
GD
can
momentarily pull the gate high and turn the MOSFET
back on.
A similar situation occurs during power-up when V
IN
is
ramping up with the DRV
CC
regulator output still low. N1
is off and the driver output, OUT, may momentarily pull
high through the power MOSFET’s C
GD
, turning on the
power MOSFET. The N-channel MOSFETs N2 and N3,
shown in Figure 2, prevent the driver output from going
high in this situation. If DRV
CC
is low, N3 is off. If OUT is
pulled high through the power MOSFET’s C
GD
, the gate of
N2 gets pulled high through R
O
. This turns N2 on, which
then pulls OUT low. Once DRV
CC
is >1V, N3 turns on to
hold the N2 gate low, thus disabling N2.
The predriver that drives Q1, P1 and N1 uses an adaptive
method to minimize cross-conduction currents. This is
done with a 5ns nonoverlapping transition time. N1 is fully
turned off before Q1 is turned on and vice-versa using this
5ns buffer time. This minimizes any cross-conduction
currents while Q1 and N1 are switching on and off without
affecting their rise and fall times.
Thermal Shutdown
The LTC4441/LTC4441-1 has a thermal detector that
disables the DRV
CC
regulator and pulls the driver output
low when activated. If the junction temperature exceeds
150
°
C, the driver pull-up devices, Q1 and P1, turn off while
the pull-down device, N1, turns on briskly for 200ns to
quickly pull the output low. The thermal shutdown circuit
has 20
°
C of hysteresis.
Enable/Shutdown Input
The EN/SHDN pin serves two functions. Pulling this pin
below 0.45V forces the LTC4441/LTC4441-1 into shut-
down mode. In shutdown mode, the internal circuitry and
the DRV
CC
regulator are off and the supply current drops
to <12
μ
A. If the input voltage is between 0.45V and 1.21V,
the DRV
CC
regulator and internal circuit power up but the
driver output stays low. If the input goes above 1.21V, the
driver starts switching according to the input logic signal.
The driver enable comparator has a small hysteresis of
120mV.
Blanking
In some switcher applications, a current sense resistor is
placed between the low side power MOSFET’s source
terminal and ground to sense the current in the MOSFET.
With this configuration, the switching controller must
incorporate some timing interval to blank the ringing on
the current sense signal immediately after the MOSFET is
turned on. This ringing is caused by the parasitic induc-
tance and capacitance of the PCB trace and the MOSFET.
The duration of the ringing is thus dependent on the PCB
layout and the components used and can be longer than
the blanking interval provided by the controller.
The 10-Lead LTC4441 includes an open-drain output that
can be used to extend this blanking interval. The 8-Lead
LTC4441-1 does not have this blanking function. Figure 3
shows the BLANK pin connection. The BLANK pin is
connected directly to the switching controller’s SENSE
+
input. Figure 4 shows the blanking waveforms. If the
driver input is low, the external power MOSFET is off and
MB turns on to hold SENSE
+
low. If the driver input goes
high, the power MOSFET turns on after the driver’s propa-
gation delay. MB remains on, attenuating the ringing seen
by the controller’s SENSE
+
input. After the programmed
blanking time, MB turns off to enable the current sense
APPLICATIU
W
U
U
Figure 3. Blanking Circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC4441EMSE | 制造商:Linear Technology 功能描述:MOSFET DRVR 6A 1-OUT Non-Inv 10-Pin MSOP EP |
| LTC4441EMSE#PBF | 功能描述:IC MOSFET DRIVER N-CH 10-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC4441EMSE#TR | 制造商:Linear Technology 功能描述:MOSFET DRVR 6A 1-OUT Non-Inv 10-Pin MSOP EP T/R |
| LTC4441EMSE#TRPBF | 功能描述:IC MOSFET DRIVER N-CH 10-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC4441ES8-1#PBF | 功能描述:IC MOSFET DRIVER N-CH 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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