參數(shù)資料
型號: LTE-302
廠商: 光寶科技股份有限公司
英文描述: SELECTED TO SPECIFIC ON-LIVE INTENSITY AND RADIANT INTENSITY RANGES
中文描述: 選定具體的,現(xiàn)場強度和輻射強度的變化范圍
文件頁數(shù): 3/3頁
文件大?。?/td> 110K
代理商: LTE-302
+/0
(7(*2))-3)'.
Foward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
FIG.6 RADIATION DIAGRAM
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
F
O
V
R
0
1.2
1.6
2.0
2.4
2.8
50
40
30
20
10
0
0
20
40
60
80
100
5.0
4.0
3.0
2.0
1.0
0
0.5 0.3
0.1
0.2 0.4 0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1040
940
840
10
20
30
40
50
60
R
V
O
0
20
10
o
o
o
80
90
o
o
70
60
o
o
50
40
o
o
30
o
0
-20
0.6
0.2
0.4
0
0.8
1.0
1.2
80
60
40
20
0
F
AMBIENT TEMPERATURE
FIG.2 FORWARD CURRENT VS.
Ambient Temperature Ta ( C)
o
100
-40
0
-20
20
60
40
80
Ambient Temperature Ta ( C)
o
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*4%
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PDF描述
LTE-3271T GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
LTE-3271TL GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
LTE-4206 SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LTE-302-E 功能描述:紅外發(fā)射源 Ir Emitter Clear 940nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
LTE-302L1-M 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:Property of Lite-On Only
LTE-302-M 功能描述:紅外發(fā)射源 Emitter Clear 940nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
LTE-302-M-002 制造商:Lite-On Semiconductor Corporation 功能描述:IRED,940,SIDE LOOK,CLEAR - Tape and Reel
LTE-302-M-012 制造商:Lite-On Semiconductor Corporation 功能描述:IRED,940,SIDE LOOK,CLEAR - Tape and Reel