參數(shù)資料
型號: LUCL7585GBE-D
英文描述: Full-Feature,Low-Power SLIC and Switch
中文描述: 全功能,低功耗SLIC和開關(guān)
文件頁數(shù): 17/22頁
文件大?。?/td> 446K
代理商: LUCL7585GBE-D
Agere Communications Inc.
17
Data Sheet
September 2001
L7585G Full-Feature, Low-Power SLIC and Switch
Electrical Characteristics
(continued)
Table 16. Ringing Access Switch (SW5)
1. This parameter is not tested in production; it is guaranteed by design and device characterization.
2. Applied voltage is 100 Vp-p square wave at 100 Hz to measure dV/dT sensitivity.
3. Applied voltage is 100 Vp-p square wave at 100 Hz to measure dV/dt sensitivity at 200 V/
μs typical with no switch turn-on. In the case of
dV/dt induced turn-on at higher dV/dt and amplitude, the design objective is no damage to at least 2000 V/μs and full voltage. A known con-
dition that can cause damage is initial current flow prior to the application of the dV/dt and the sudden application of reverse bias with dV/dt
induced switch turn-off. In this case, no damage will occur for dV/dt up to 2000 V/μs as guaranteed by design and characterization.
On-State Switch I-V Characteristics
Parameter
Min
Typ
Max
Unit
Off-state:
Maximum Differential Voltage
dc Leakage Current (V
SW
= ±500 V)
dc Leakage Current (V
SW
= ±250 V)
Feedthrough Capacitance
1
On-state (See On-State Switch V-I Characteristics section.):
Crossover Offset Voltage (V
OS
; ISW = ±1 mA)
Resistance (R
ON
)
Surge Current (10 μs x 1000 μs pulse)
1
Release Current
1
dV/dT Sensitivity
1, 2
Common-mode Voltage (maximum either switch terminal with
respect to ground)
1
±475
±20
±1
V
μA
μA
pF
0.1
200
3
10
2.5
2
2000
320
V
A
mA
V/μs
V
12-3291.a(F)
A. SW2a, SW3, SW4a, SW6
12-3292.a(F)
B. SW5
5-5990.c(F)
C. SW1, SW2, SW4
Figure 3. On-State Switch I-V Characteristics
–V
MAX
–I
LIMIT
+I
LIMIT
+V
MAX
V
SW
+1.5 V
–1.5 V
R
ON
2/3 R
ON
LIMITING
I
SW
2/3 R
ON
LIMITING
–V
OS
+V
OS
V
SW
R
ON
I
SW
R
ON
I
LIM1
I
SW
+1.5
2/3 R
ON
R
ON
–1.5
–I
LIM1
+V
MAX
V
SW
I
LIM2
–I
LIM2
+V
2
+V
1
–V
MAX
–V
2
–V
1
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