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| 型號(hào)： | LV1721E50R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-445A, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | LV1721E50R |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LV1721E50R
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC19a”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A wideband amplifier.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
T
j
= 75
°
C; note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
4
K/W
K/W
0.7
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
CE
= 20 V; R
BE
= 47
V
CE
= 15 V; I
B
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 3 V; I
C
= 1 A
15
0.5
2.5
25
2
100
100
mA
mA
mA
mA
μ
A
I
CER
I
CEO
I
EBO
h
FE
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(A)
P
L1
(W)
G
po
(dB)
Z
i
; Z
L
(
)
see Fig 6
Class-A (CW)
1.7 to 2.1
16
1.1
≥
5; typ. 5.5
≥
7; typ. 8
Fig.4 Wideband test circuit board.
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (
ε
r
= 2.5); thickness: 0.8 mm.
Frequency = 1.7 to 2.1 GHz, CW, class-A application.
handbook, full pagewidth
MSA096
input
VSWR <2
ZO = 50
7.2
5
2
2
3
2.5
9.5
6.5
3
11
14
5.5
5.5
5
12.3
30
30
9
24
18
18
C
C
output
VSWR <2
ZO = 50
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