參數(shù)資料
型號： LV47009P-E
廠商： ON Semiconductor
文件頁數(shù)： 4/11頁
文件大小： 0K
描述： IC AUDIO AMP BTL 41W 4CH HZIP25
標(biāo)準(zhǔn)包裝： 15
類型： AB 類
輸出類型： 4-通道（四路）
在某負(fù)載時(shí)最大輸出功率 x 通道數(shù)量： 24W x 4 @ 4 歐姆
電源電壓： 8 V ~ 16 V
特點(diǎn)： 靜音，短路和熱保護(hù)
安裝類型： *
供應(yīng)商設(shè)備封裝： *
封裝/外殼： *
包裝： *
LV47009P
No.A1959-2/11
Specifications
Absolute Maximum Ratings at Ta = 25
C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VCC max1
No signal, t = 1 minute
26
V
VCC max2
During operations
18
V
Output current
IO peak
Per channel
4.5/ch
A
Allowable power dissipation
Pd max
With an infinity heat sink
50
W
Operating temperature
Topr
-40 to +85
C
Storage temperature
Tstg
-40 to +150
C
Junction temperature
Tj
150
C
Thermal resistance between the junction
and case
j-c
1
C/W
Recommended Operating Ranges at Ta = 25
C
Parameter
Symbol
Conditions
Ratings
Unit
Load resistance
RL op
4
Operating supply voltage range
VCC op
A range not exceeding Pdmax
8 to 16
V
Electrical Characteristics at Ta = 25°C, VCC = 14.4V, RL = 4, f = 1kHz, Rg = 600
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Quiescent current
ICCO
RL = , Rg = 0
200
400
mA
Standby current
Ist
Vst = 0V
10
A
Voltage gain
VG
VO = 0dBm
25
26
27
dB
Voltage gain difference
VG
-1
+1
dB
Output power
PO
THD = 10%
19
24
W
PO max1
Max Power
37
W
PO max2
VCC = 15.2, Max Power
41
W
Output offset voltage
Vn offset
Rg = 0
-150
+150
mV
Total harmonic distortion
THD
PO = 4W
0.03
0.2
%
Channel separation
CHsep
VO = 0dBm, Rg = 10k
55
65
dB
Ripple rejection ratio
SVRR
Rg = 0
, fr = 100Hz, VCCR = 0dBm
45
65
dB
Output noise voltage
VNO
Rg = 0
, B.P.F. = 20Hz to 20kHz
80
200
Vrms
Input resistance
Ri
40
50
65
k
Mute attenuation
Matt
VO = 20dBm, mute : on
75
90
dB
Standby pin control voltage
Vstby H
Amp : on
2.5
VCC
V
Vstby L
Amp : off
0.0
0.5
V
Mute pin control voltage
Vmute H
Mute : off
Open
-
Vmute L
Mute : on
0.0
1.0
V
* 0dBm = 0.775Vrms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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