參數(shù)資料
型號: LVE21050R
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: C BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-445A, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 63K
代理商: LVE21050R
1997 Feb 14
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LVE21050R
FEATURES
Diffused emitter ballasting resistors provide excellent
current sharing and withstanding a high VSWR
Self-aligned process entirely ion implanted
Gold metallization ensures an optimum temperature
profile with excellent performance and reliability
Input matching cell improves input impedance and
allows an easier design of wideband circuits.
APPLICATIONS
Common emitter class-A linear power amplifiers up
to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT445A metal ceramic flange package with the emitter
connected to the flange.
PINNING - SOT445A
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
2
MAM251
Top view
3
3
e
c
b
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A circuit.
MODE OF OPERATION
f
(GHz)
V
CC
(V)
I
C
(A)
P
L1
(W)
G
po
(dB)
Z
i
; Z
L
(
)
see Fig 4
Class-A (CW)
2.1
16
1.1
typ. 5.5
typ. 8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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