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參數(shù)資料
| 型號： | LVXT8053 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Analog Multiplexer / Demultiplexer High−Performance Silicon−Gate CMOS |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 171K |
| 代理商： | LVXT8053 |
MC74LVXT8053
http://onsemi.com
5
ADDITIONAL APPLICATION CHARACTERISTICS
(GND = 0 V)
V
CC
V
Limit*
Symbol
Parameter
Condition
25
°
C
Unit
BW
Maximum OnChannel Bandwidth
Mi i
or Minimum Frequency Response
(Figure 6)
f
in
= 1MHz Sine Wave; Adjust f
in
Voltage to Obtain 0dBm
at V
OS
; Increase f
in
Frequency Until dB Meter Reads 3
dB;
R
L
= 50 , C
L
= 10 pF
U til dB M t
MHz
3.0
4.5
5.5
120
120
120
OffChannel Feedthrough
Isolation (Figure 7)
f
in
= Sine Wave; Adjust f
in
Voltage to Obtain 0 dBm at
V
IS
f
in
= 10kHz, R
L
= 600 , C
L
= 50 pF
3.0
4.5
5.5
50
50
50
dB
f
in
= 1.0MHz, R
L
= 50 , C
L
= 10pF
3.0
4.5
5.5
37
37
37
Feedthrough Noise.
ChannelSelect Input to Common
I/O (Figure 8)
V
in
≤
1MHz Square Wave (t
r
= t
f
= 3 ns); Adjust R
L
at
Setup so that I
S
= 0A;
Enable = GND
R
L
= 600 , C
L
= 50pF
3.0
4.5
5.5
25
105
135
mV
PP
R
L
= 10 k , C
L
= 10pF
3.0
4.5
5.5
35
145
190
Crosstalk Between Any Two
Switches (Figure 12)
f
in
= Sine Wave; Adjust f
in
Voltage to Obtain 0dBm at V
IS
f
in
= 10 kHz, R
L
= 600 , C
L
= 50pF
3.0
4.5
5.5
50
50
50
dB
f
in
= 1.0MHz, R
L
= 50 , C
L
= 10pF
3.0
4.5
5.5
60
60
60
THD
Total Harmonic Distortion
(Figure 14)
f
in
= 1kHz, R
L
= 10 k , C
L
= 50pF
THD = THD
measured
THD
source
V
IS
= 2.0V
PP
sine wave
V
IS
= 4.0V
PP
sine wave
V
IS
= 5.0V
PP
sine wave
3.0
4.5
5.5
0.10
0.08
0.05
%
*Limits not tested. Determined by design and verified by qualification.
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