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參數(shù)資料
| 型號(hào)： | LWE2015R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | LWE2015R |
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2015R
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance.
APPLICATIONS
Common emitter class-A amplifiers up to 2.3 GHz in CW
conditions for military and professional applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT446A metal ceramic studless package.
PINNING - SOT446A
PIN
DESCRIPTION
1
2
3
collector
base
emitter
Fig.1 Simplified outline and symbol.
Marking code
: 411
handbook, halfpage
MAM313
e
c
b
1
2
3
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A selective amplifier.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
≥
1.2
G
po
(dB)
≥
7.5
Z
i
(
)
Z
L
(
)
Class-A (CW)
2.3
16
250
3.5 + j11
6.4 + j2
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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