參數(shù)資料
型號: LX723
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
中文描述: 硅柵增強型射頻功率LDMOS晶體管
文件頁數(shù): 2/2頁
文件大小: 37K
代理商: LX723
L1C 3 DIE ID, GM vs VG
0.1
1
10
100
0
2
4
8
10
12
14
Vgs in Volts
I
G
L1C 3DIE CAP ACIT ANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
LX 723 P OUT VS P IN Freq= 500MHz, VDS = 12.5V, Idq= .6A
38
39
40
41
42
43
44
45
46
47
48
27
29
31
33
35
37
39
P IN IN dBm
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
Pout
Gain
Efficiency = 57%
1dB compresion = 45.8 dBm
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
LX723
L1C 3 DIE IV
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
I
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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