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參數(shù)資料
| 型號(hào)： | LXE15450X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | LXE15450X |
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE15450X
FEATURES
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated common-emitter
structure provides high emitter
efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Internal input and output
prematching ensures a good
stability and allows an easier
design of circuits.
APPLICATIONS
Intended for use in common-emitter,
class AB amplifiers in CW conditions
for professional applications between
1.5 GHz and 1.7 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with emitter connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class AB
amplifier.
PINNING - SOT439A
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
≥
45
G
po
(dB)
≥
8
η
C
(%)
Z
i
; Z
L
(
)
see Figs 8
and 9
Class AB (CW)
1.5
24
0.15
typ. 48
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
ok, 4 columns
e
c
b
MAM045
1
2
Top view
3
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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