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參數(shù)資料
| 型號： | M100A-E3/73 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 64K |
| 代理商： | M100A-E3/73 |
Document Number: 88659
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 03-Nov-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
General Purpose Plastic Rectifier
M100A thru M100M
Vishay General Semiconductor
FEATURES
Low forward voltage drop
Low leakage current
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
Note
These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
50 A
IR
1.0 μA
VF
1.0 V, 1.1 V
TJ max.
150 °C
DO-204AL (DO-41)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M100A
M100B
M100D
M100G
M100J
M100K M100M
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 100 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
Maximum full load reverse current full cycle average
0.375" (9.5 mm) lead length at TA = 55 °C
IR(AV)
100
μA
Operating junction and storage temperature range
TJ, TSTG
- 50 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
M100A
M100B
M100D
M100G
M100J
M100K M100M
UNIT
Maximum
instantaneous
forward voltage
1.0 A
VF
1.0
1.1
V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
1.0
μA
TA = 100 °C
50
Typical reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
μs
Typical junction
capacitance
4.0 V, 1 MHz
CJ
15
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M100B-E3/54 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100B-E3/73 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100D-E3/54 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100K-E3/54 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| M100K-E3/73 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
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