- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377801 > M13S128168A-5BG (ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC) 2M x 16 Bit x 4 Banks Double Data Rate SDRAM PDF資料下載
參數(shù)資料
| 型號： | M13S128168A-5BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| 中文描述： | 8M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| 封裝： | 8 X 13 MM, LEAD FREE, BGA-60 |
| 文件頁數(shù)： | 28/49頁 |
| 文件大?。?/td> | 1513K |
| 代理商： | M13S128168A-5BG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當(dāng)前第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁
ES MT
M13S128168A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2007
Revision : 1.8 28/49
Functional Truth Table.
Current
CS
RAS CAS
WE
Address
Command
Action
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ / WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
Bank Active, Latch RA
L
L
H
L
BA, A10
PRE / PREA
NOP*4
L
L
L
H
X
Refresh
AUTO-Refresh*5
IDLE
L
L
L
L
Op-Code Mode-Add
MRS
Mode Register Set*5
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
Burst Stop
NOP
L
H
L
H
BA, CA, A10
READ / READA
Begin Read, Latch CA,
Determine Auto -precharge
L
H
L
L
BA, CA, A10
WRITE / WRITEA
Begin Write, Latch CA,
Determine Auto -precharge
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE / PREA
Precharge/Precharge All
L
L
L
H
X
Refresh
ILLEGAL
ROW ACTIVE
L
L
L
L
Op-Code Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
BA
Burst Stop
Terminate Burst
L
H
L
H
BA, CA, A10
READ / READA
Terminate Burst, Latch CA,
Begin New Read, Determine
Auto-Precharge*3
L
H
L
L
BA, CA, A10
WRITE / WRITEA
ILLEGAL
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE / PREA
Terminate Burst, Precharge
L
L
L
H
X
Refresh
ILLEGAL
READ
L
L
L
L
Op-Code Mode-Add
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M13S128168A-5T | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-5TG | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-6BG | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-6T | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-6TG | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M13S128168A-5BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-5T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-5TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-5TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-6BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。