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參數(shù)資料
| 型號(hào)： | M13S128168A-6TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| 中文描述： | 8M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 |
| 文件頁數(shù)： | 29/49頁 |
| 文件大?。?/td> | 1513K |
| 代理商： | M13S128168A-6TG |
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ES MT
M13S128168A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2007
Revision : 1.8 29/49
Current State
CS
RAS CAS
WE
Address
Command
Action
H
X
X
X
X
DESEL
NOP (Continue Burst to end)
L
H
H
H
X
NOP
NOP (Continue Burst to end)
L
H
H
L
BA
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
Terminate Burst With DM=High,
Latch CA, Begin Read, Determine
Auto-Precharge*3
L
H
L
L
BA, CA, A10
WRITE/WRITEA
Terminate Burst, Latch CA,
Begin new Write, Determine
Auto-Precharge*3
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE / PREA
Terminal Burst With DM=High,
Precharge
L
L
L
H
X
Refresh
ILLEGAL
WRITE
L
L
L
L
Op-Code Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to end)
L
H
H
H
X
NOP
NOP (Continue Burst to end)
L
H
H
L
BA
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A10
READ
READ*7
L
H
L
L
BA, CA, A10
WRITE
ILLEGAL
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
READ with
AUTO
PRECHARGE
L
L
L
L
Op-Code Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
BA
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A10
READ
ILLEGAL
L
H
L
L
BA, CA, A10
WRITE
Write
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL*2
L
L
L
H
X
Refresh
ILLEGAL
WRITE with
AUTO
PRECHARGE
L
L
L
L
Op-Code Mode-Add
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M13S128168A-7.5AB | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128324A | 1M x 32 Bit x 4 Banks Double Data Rate SDRAM |
| M13S2561616A | 4M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S2561616A-4TG | 4M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S2561616A-5TG | 4M x 16 Bit x 4 Banks Double Data Rate SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M13S128168A-6TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128168A-7.5AB | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128324A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128324A_09 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM |
| M13S128324A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM |
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