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參數(shù)資料
| 型號： | M14256 |
| 廠商： | 意法半導體 |
| 英文描述： | Memory Card IC 256K Bit Serial IIC Bus EEPROM(256K位串行IIC總線EEPROM) |
| 中文描述： | 記憶卡IC 256K位串行IIC總線的EEPROM（256K位串行總線EEPROM的國際進口許可證） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | M14256 |
1/2
DATA BRIEFING
September 1998
Complete data available on Data-on-Disc CD-ROMor at www.st.com
M14256
M14128
Memory Card IC
256/128 Kbit Serial I
2
C Bus EEPROM
I
Compatible with I
2
C Extended Addressing
I
Two Wire I
2
C Serial Interface
Supports 400 kHz Protocol
I
Single Supply Voltage (2.5 V to 5.5 V)
I
Hardware Write Control
I
BYTE and PAGE WRITE (up to 64 Bytes)
I
BYTE, RANDOM and SEQUENTIAL READ
Modes
I
Self-Timed Programming Cycle
I
Automatic Address Incrementing
I
Enhanced ESD/Latch-Up Behaviour
I
100,000 Erase/Write Cycles (minimum)
I
40 Year Data Retention (minimum)
I
5 ms Programming Time (typical)
DESCRIPTION
Each device is an electrically erasable program-
mable memory (EEPROM) fabricated with STMi-
croelectronics’s
High
Polysilicon, CMOS technology. This guarantees
an endurance typically well above 100,000 Erase/
Write cycles, with a data retention of 40 years. The
memory operates with a power supply as low as
2.5 V for the M14xxx-W version.
The M14256 and M14128 are available in micro-
module form only. For availability of the M14256 or
Endurance,
Double
Micromodule (D22)
Figure 1. Logic Diagram
AI02217
SDA
VCC
M14xxx
WC
SCL
GND
Table 1. Signal Names
SDA
Serial Data/Address Input/
Output
SCL
Serial Clock
WC
Write Control
V
CC
Supply Voltage
GND
Ground
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