2-6 Revision 13 Calculating Power Dissipation Quiescent Supply Current Power per I/O Pin Table 2-7 " />
參數(shù)資料
型號(hào): M1A3PE3000-2PQ208
廠商: Microsemi SoC
文件頁數(shù): 76/162頁
文件大?。?/td> 0K
描述: IC FPGA 1KB FLASH 3M 208-PQFP
標(biāo)準(zhǔn)包裝: 24
系列: ProASIC3E
RAM 位總計(jì): 516096
輸入/輸出數(shù): 147
門數(shù): 3000000
電源電壓: 1.425 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 70°C
封裝/外殼: 208-BFQFP
供應(yīng)商設(shè)備封裝: 208-PQFP(28x28)
ProASIC3E DC and Switching Characteristics
2-6
Revision 13
Calculating Power Dissipation
Quiescent Supply Current
Power per I/O Pin
Table 2-7 Quiescent Supply Current Characteristics
A3PE600
A3PE1500
A3PE3000
Typical (25°C)
5 mA
12 mA
25 mA
Maximum (Commercial)
30 mA
70 mA
150 mA
Maximum (Industrial)
45 mA
105 mA
225 mA
Notes:
1. IDD Includes VCC, VPUMP, VCCI, and VMV currents. Values do not include I/O static contribution, which is shown in
2. –F speed grade devices may experience higher standby IDD of up to five times the standard IDD and higher I/O
leakage.
Table 2-8 Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings
VMV
(V)
Static Power
PDC2 (mW)1
Dynamic Power
PAC9 (W/MHz)2
Single-Ended
3.3 V LVTTL/LVCMOS
3.3
17.39
3.3 V LVTTL/LVCMOS – Schmitt trigger
3.3
25.51
3.3 V LVTTL/LVCMOS Wide Range3
3.3
16.34
3.3 V LVTTL/LVCMOS Wide Range – Schmitt trigger3
3.3
24.49
2.5 V LVCMOS
2.5
5.76
2.5 V LVCMOS – Schmitt trigger
2.5
7.16
1.8 V LVCMOS
1.8
2.72
1.8 V LVCMOS – Schmitt trigger
1.8
2.80
1.5 V LVCMOS (JESD8-11)
1.5
2.08
1.5 V LVCMOS (JESD8-11) – Schmitt trigger
1.5
2.00
3.3 V PCI
3.3
18.82
3.3 V PCI – Schmitt trigger
3.3
20.12
3.3 V PCI-X
3.3
18.82
3.3 V PCI-X – Schmitt trigger
3.3
20.12
Voltage-Referenced
3.3 V GTL
3.3
2.90
8.23
2.5 V GTL
2.5
2.13
4.78
3.3 V GTL+
3.3
2.81
4.14
2.5 V GTL+
2.5
2.57
3.71
Notes:
1. PDC2 is the static power (where applicable) measured on VMV.
2. PAC9 is the total dynamic power measured on VCC and VMV.
3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8b specification.
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