參數(shù)資料
型號(hào)： M21L216128A
廠商： Electronic Theatre Controls, Inc.
英文描述： 128 K x 16 SRAM HIGH SPEED CMOS SRAM
中文描述： 128畝× 16 SRAM的高速CMOS的SRAM
文件頁(yè)數(shù)： 3/14頁(yè)
文件大?。?/td> 168K
代理商： M21L216128A
(607
M21L216128A
Elite Semiconduture Memory Technology Inc
Publication Date
:
Sep. 2000
Revision
:
1.0
3/14
ABSOLUTE MAXIMUM RATINGS *
Voltage on V
CC
Supply Relative to Vss … ……-0.5V to +4.6V
V
IN
…………………………………………..….-0.5V to V
CC
+1.0V
Operating Temperature, Topr ………………….. 0 C
to +70 C
Storage Temperature (plastic) ……………….-55 C
to +125 C
Junction Temperature ……………………………………+125 C
Power Dissipation …..…………………………………….…1.0W
Short Circuit Output Current ………………………………50mA
*Stresses greater than those listed under Absolute
Maximum. Ratings may permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATIONS
(All Temperature Ranges ; V
CC
= 3.3V
±
0.3V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
Input High (Logic 1) Voltage
V
IH
2.2
V
CC
+0.5
V
1,2
Input Low (Logic 0) Voltage
V
II
-0.5
0.8
V
1,2
Input Leakage Current
0V
≤
V
IN
≤
V
CC
Output(s) disable
0V
≤
V
OUT
≤
V
CC
I
OH
= -4.0 mA
I
LI
-10
10
μ
A
Output Leakage Current
I
LO
-5
5
μ
A
Output High Voltage
V
OH
2.4
V
1
1
Output Low Voltage
I
OL
= 8.0 mA
V
OL
0.4
V
Supply Voltage
V
CC
3.0
3.6
V
1
MAX
DESCRIPTION
CONDITIONS
SYMBOL
-10
-12
-15
UNITS
NOTES
Power Supply
Current : Operating
Device selected;
CE
≤
V
IL
; V
CC
=MAX;
f=f
MAX
; outputs open
CE
≥
V
IH
; V
CC
=MAX; f=f
MAX
CE
≥
V
CC
-0.2; V
CC
= MAX;
all other inputs
≤
GND +0.2 or
≥
V
CC -
0.2;
all inputs static ; f=0
I
CC
190
160
130
mA
3
TTL Standby
I
SB1
35
30
25
mA
CMOS Standby
1
I
SB2
10
10
10
mA
CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
MAX
UNITS NOTES
Input Capacitance
C
I
6
pF
4
Input/Output Capacitance(DQ)
T
A
=
C
25
°
; f=1 MHz
V
CC
=3.3V
C
I/O
8
pF
4
相關(guān)PDF資料
PDF描述
M21L216128A-10J 128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-10T 128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-12J 128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-12T 128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-15J 128 K x 16 SRAM HIGH SPEED CMOS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M21L216128A-10J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-10T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-12J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-12T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128 K x 16 SRAM HIGH SPEED CMOS SRAM
M21L216128A-15J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128 K x 16 SRAM HIGH SPEED CMOS SRAM
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