參數(shù)資料
型號(hào): M25P16-VMW3TG
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 34/55頁(yè)
文件大小: 335K
代理商: M25P16-VMW3TG
Instructions
M25P16
34/55
Figure 19.
Release from Deep Power-down and Read Electronic Signature (RES) instruction
sequence and data-out sequence
1.
The value of the 8-bit Electronic Signature, for the M25P16, is 14h.
Figure 20.
Release from Deep Power-down (RES) instruction sequence
Driving Chip Select (S) High after the 8
-
bit instruction byte has been received by the device, but before
the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in
Figure 20
),
still ensures that the device is put into Stand-by Power mode. If the device was not previously in the Deep
Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously
in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by t
RES1
,
and Chip Select (S) must remain High for at least t
RES1
(max), as specified in
Table 15
. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
C
D
AI04047C
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
2
0
1
High Impedance
Electronic Signature Out
Instruction
3 Dummy Bytes
0
MSB
Stand-by Mode
Deep Power-down Mode
MSB
t
RES2
C
D
AI04078B
S
2
1
3
4
5
6
7
0
t
RES1
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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