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參數(shù)資料
| 型號： | M25P16-VMW6TG |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 24/55頁 |
| 文件大?。?/td> | 335K |
| 代理商： | M25P16-VMW6TG |
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Instructions
M25P16
24/55
6.5
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been decoded and
executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code and the data byte on Serial Data Input (D).
The instruction sequence is shown in
Figure 12
.
The Write Status Register (WRSR) instruction has no effect on b6, b5, b1 and b0 of the
Status Register. b6 and b5 are always read as 0.
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select
(S) is driven High, the self-timed Write Status Register cycle (whose duration is t
W
) is
initiated. While the Write Status Register cycle is in progress, the Status Register may still
be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the
Block Protect (BP2, BP1, BP0) bits, to define the size of the area that is to be treated as
read-only, as defined in
Table 2
. The Write Status Register (WRSR) instruction also allows
the user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the
Write Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect
(W) signal allow the device to be put in the Hardware Protected Mode (HPM). The Write
Status Register (WRSR) instruction is not executed once the Hardware Protected Mode
(HPM) is entered.
Figure 12.
Write Status Register (WRSR) instruction sequence
C
D
AI02282D
S
Q
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
High Impedance
Instruction
Status
Register In
0
7
6
5
4
3
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P16-VMW6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P16-VMW6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16-VMW6YG | 制造商:Micron Technology Inc 功能描述:16 MBIT, SERIAL FLASH MEMORY, 75 MHZ SPI BUS INTERFACE - Trays |
| M25P20 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface |
| M25P20-AV3D11 | 制造商:Micron Technology Inc 功能描述:2MX1 NOR FLASH DIE-COM AUTOMOTIVE TEMP 3.0V - Trays |
| M25P20-ESU21/90 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
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