參數(shù)資料
型號: M25P20-VMN34
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 28/39頁
文件大?。?/td> 230K
代理商: M25P20-VMN34
M25P20
28/39
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC Characteristic tables that follow are de-
rived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parame-
ters.
Table 9. Operating Conditions
Table 10. Data Retention and Endurance
Note: 1. This is preliminary data
Table 11. Capacitance
Note: Sampled only, not 100% tested, at T
A
=25°C and a frequency of 20MHz.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.7
3.6
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Ambient Operating Temperature (Device Grade 3)
–40
125
Parameter
Condition
Min.
Max.
Unit
Erase/Program Cycles
Device Grade 6
100 000
cycles per
sector
Device Grade 3
1
10 000
Data Retention
Device Grade 6
20
years
Device Grade 3
1
(at 85°C)
20
Symbol
Parameter
Test Condition
Min
.
Max
.
Unit
C
OUT
Output Capacitance (Q)
V
OUT
= 0V
8
pF
C
IN
Input Capacitance (other pins)
V
IN
= 0V
6
pF
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