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參數(shù)資料
| 型號： | M25P40-VMN6 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 33/40頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMN6 |
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M25P40
Table 18. AC Characteristics (40MHz Operation, Device Grade 6)
Note: 1. t
CH
+ t
CL
must be greater than or equal to 1/ f
C
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. Details of how to find the date of marking are given in Application Note,
AN1995
.
40MHz available for products marked since week 20 of 2004, only
5
Test conditions specified in
Table 9.
and
Table 16.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following instructions:
FAST_READ, PP SE, BE, DP RES,
WREN, WRDI, RDSR, WRSR
D.C.
40
MHz
f
R
Clock Frequency for READ instructions
D.C.
20
MHz
t
CH 1
t
CLH
Clock High Time
11
ns
t
CL 1
t
CLL
Clock Low Time
11
ns
t
CLCH 2
Clock Rise Time
3
(peak to peak)
0.1
V/ns
t
CHCL 2
Clock Fall Time
3
(peak to peak)
0.1
V/ns
t
SLCH
t
CSS
S Active Setup Time (relative to C)
5
ns
t
CHSL
S Not Active Hold Time (relative to C)
5
ns
t
DVCH
t
DSU
Data In Setup Time
2
ns
t
CHDX
t
DH
Data In Hold Time
5
ns
t
CHSH
S Active Hold Time (relative to C)
5
ns
t
SHCH
S Not Active Setup Time (relative to C)
5
ns
t
SHSL
t
CSH
S Deselect Time
100
ns
t
SHQZ 2
t
DIS
Output Disable Time
9
ns
t
CLQV
t
V
Clock Low to Output Valid
9
ns
t
CLQX
t
HO
Output Hold Time
0
ns
t
HLCH
HOLD Setup Time (relative to C)
5
ns
t
CHHH
HOLD Hold Time (relative to C)
5
ns
t
HHCH
HOLD Setup Time (relative to C)
5
ns
t
CHHL
HOLD Hold Time (relative to C)
5
ns
t
HHQX 2
t
LZ
HOLD to Output Low-Z
9
ns
t
HLQZ 2
t
HZ
HOLD to Output High-Z
9
ns
t
WHSL 4
Write Protect Setup Time
20
ns
t
SHWL 4
Write Protect Hold Time
100
ns
t
DP 2
S High to Deep Power-down Mode
3
μ
s
t
RES1 2
S High to Standby Mode without Electronic
Signature Read
3
μ
s
t
RES2 2
S High to Standby Mode with Electronic
Signature Read
1.8
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40VMN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface |
| M25P40-VMN6G/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40VMN6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN6P | 功能描述:閃存 Lo-Volt 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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