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參數資料
| 型號： | M25P40-VMP3TP |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數： | 21/40頁 |
| 文件大小： | 232K |
| 代理商： | M25P40-VMP3TP |
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M25P40
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decod-
ed, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 3.
) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 15.
.
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Sector Erase cycle (whose du-
ration is t
SE
) is initiated. While the Sector Erase cy-
cle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Sector Erase (SE) instruction applied to a page
which is protected by the Block Protect (BP2, BP1,
BP0) bits (see
Table 3.
and
Table 2.
) is not execut-
ed.
Figure 15. Sector Erase (SE)
Instruction Sequence
Note: 1. Address bits A23 to A19 are Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關PDF資料 |
PDF描述 |
|---|---|
| M25P40-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M25P40-VMP3TP/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40VMP6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMP6 | 功能描述:IC FLASH 4MBIT 40MHZ 8VFQFPN RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| M25P40VMP6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMP6G | 功能描述:閃存 4MBIT FLASH RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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