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參數(shù)資料
| 型號： | M25P40-VMP6 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 30/40頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMP6 |
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M25P40
30/40
Table 12. DC Characteristics (Device Grade 6)
Table 13. DC Characteristics (Device Grade 3)
Note: 1. This is preliminary data
Symbol
Parameter
Test Condition
(in addition to those in
Table 9.
)
Min.
Max.
Unit
I
LI
Input Leakage Current
± 2
μA
I
LO
Output Leakage Current
± 2
μA
I
CC1
Standby Current
S = V
CC
, V
IN
= V
SS
or
V
CC
50
μA
I
CC2
Deep Power-down Current
S = V
CC
, V
IN
= V
SS
or
V
CC
10
μA
I
CC3
Operating Current (READ)
C = 0.1V
CC
/ 0.9.V
CC
at 40MHz,
Q = open
8
mA
C = 0.1V
CC
/ 0.9.V
CC
at 20MHz,
Q = open
4
mA
I
CC4
Operating Current (PP)
S = V
CC
15
mA
I
CC5
Operating Current (WRSR)
S = V
CC
15
mA
I
CC6
Operating Current (SE)
S = V
CC
15
mA
I
CC7
Operating Current (BE)
S = V
CC
15
mA
V
IL
Input Low Voltage
–0.5
0.3V
CC
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.4
V
V
OL
Output Low Voltage
I
OL
= 1.6mA
0.4
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.2
V
Symbol
Parameter
Test Condition
(in addition to those in
Table 9.
)
Min.
1
Max.
1
Unit
I
LI
Input Leakage Current
± 2
μA
I
LO
Output Leakage Current
± 2
μA
I
CC1
Standby Current
S = V
CC
, V
IN
= V
SS
or
V
CC
100
μA
I
CC2
Deep Power-down Current
S = V
CC
, V
IN
= V
SS
or
V
CC
50
μA
I
CC3
Operating Current (READ)
C = 0.1V
CC
/ 0.9.V
CC
at 40MHz,
Q = open
8
mA
C = 0.1V
CC
/ 0.9.V
CC
at 20MHz,
Q = open
4
mA
I
CC4
Operating Current (PP)
S = V
CC
15
mA
I
CC5
Operating Current (WRSR)
S = V
CC
15
mA
I
CC6
Operating Current (SE)
S = V
CC
15
mA
I
CC7
Operating Current (BE)
S = V
CC
15
mA
V
IL
Input Low Voltage
– 0.5
0.3V
CC
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.4
V
V
OL
Output Low Voltage
I
OL
= 1.6mA
0.4
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.2
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P40-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40VMP6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMP6G | 功能描述:閃存 4MBIT FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P40-VMP6G/X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMP6GB | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin VFQFPN EP Tray 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin VFQFPN EP Tray |
| M25P40-VMP6Gx | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory |
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