參數(shù)資料
型號(hào)： M25P40VMN6T
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 6/34頁(yè)
文件大?。?/td> 217K
代理商： M25P40VMN6T
M25P05-A
6/34
Protection Modes
The environments where non-volatile memory de-
vices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M25P05-A boasts
the following data protection mechanisms:
I
Power-On Reset and an internal timer (t
PUW
)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
I
Program, Erase and Write Status Register
instructions are checked that they consist of a
number of clock pulses that is a multiple of
eight, before they are accepted for execution.
I
All instructions that modify data must be
preceded by a Write Enable (WREN) instruction
to set the Write Enable Latch (WEL) bit . This bit
is returned to its reset state by the following
events:
– Power-up
– Write Disable (WRDI) instruction completion
– Write Status Register (WRSR) instruction
completion
– Page Program (PP) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
I
The Block Protect (BP1, BP0) bits allow part of
the memory to be configured as read-only. This
is the Software Protected Mode (SPM).
I
The Write Protect (W) signal, in co-operation
with the Status Register Write Disable (SRWD)
bit, allows the Block Protect (BP1, BP0) bits and
Status Register Write Disable (SRWD) bit to be
write-protected. This is the Hardware Protected
Mode (HPM).
I
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions, as all
instructions are ignored except one particular
instruction (the Release from Deep Power-
down instruction).
Table 2. Protected Area Sizes
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, both Block Protect (BP1, BP0) are 0.
Status Register
Content
Memory Content
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
0
none
All sectors (Sectors 0 and 1)
0
1
No protection against Page Program (PP) and Sector Erase (SE)
All sectors (Sectors 0 and 1) protected against Bulk Erase (BE)
1
0
1
1
All sectors (Sectors 0 and 1)
none
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P40-VMN6T 功能描述:閃存 3.0V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25P40VMN6TG 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P40-VMN6TG 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface
M25P40-VMN6TG/X 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40VMN6TP 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
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