參數(shù)資料
型號(hào): M25P64-VMF6TG
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 28/38頁(yè)
文件大?。?/td> 519K
代理商: M25P64-VMF6TG
M25P64
28/38
MAXIMUM RATING
Stressing the device outside the ratings listed in
Table 9.
may cause permanent damage to the de-
vice. These are stress ratings only, and operation
of the device at these, or any other conditions out-
side those indicated in the Operating sections of
this specification, is not implied. Exposure to Ab-
solute Maximum Rating conditions for extended
periods may affect device reliability. Refer also to
the STMicroelectronics SURE Program and other
relevant quality documents.
Table 9. Absolute Maximum Ratings
Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
)
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
See note
(1)
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.5
4.0
V
V
CC
Supply Voltage
–0.2
4.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
–2000
2000
V
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