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參數(shù)資料
| 型號： | M25PE10-VMN6P |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 47/60頁 |
| 文件大小： | 310K |
| 代理商： | M25PE10-VMN6P |
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M25PE20, M25PE10
Initial delivery state
47/60
9
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each Byte
contains FFh). All usable Status Register bits are 0.
10
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 15.
Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
See note
(1)
1.
Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU.
JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500
, R2 = 500
)
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.6
V
CC
+ 0.6
V
V
CC
Supply Voltage
–0.6
4.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
2.
–2000
2000
V
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