參數資料
型號: M25PE80
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數: 16/43頁
文件大?。?/td> 599K
代理商: M25PE80
M25PE80
16/43
Read Identification (RDID)
The Read Identification (RDID) instruction allows
the 8-bit manufacturer identification to be read, fol-
lowed by two Bytes of device identification. The
manufacturer identification is assigned by JEDEC,
and has the value 20h for STMicroelectronics. The
device identification is assigned by the device
manufacturer, and indicates the memory type in
the first Byte (80h), and the memory capacity of
the device in the second Byte (14h).
Any Read Identification (RDID) instruction while
an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in
progress.
The device is first selected by driving Chip Select
(S) Low. Then, the 8-bit instruction code for the in-
struction is shifted in. This is followed by the 24-bit
device identification, stored in the memory, being
shifted out on Serial Data Output (Q), each bit be-
ing shifted out during the falling edge of Serial
Clock (C).
The instruction sequence is shown in
Figure 10.
.
The Read Identification (RDID) instruction is termi-
nated by driving Chip Select (S) High at any time
during data output.
When Chip Select (S) is driven High, the device is
put in the Stand-by Power mode. Once in the
Stand-by Power mode, the device waits to be se-
lected, so that it can receive, decode and execute
instructions.
Table 7. Read Identification (RDID) Data-Out Sequence
Figure 10. Read Identification (RDID) Instruction Sequence and Data-Out Sequence
Manufacturer Identification
Device Identification
Memory Type
Memory Capacity
20h
80h
14h
C
D
S
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
Instruction
0
AI06809b
Q
Manufacturer Identification
High Impedance
MSB
15 14 13
3
2
1
0
Device Identification
MSB
16 17 18
28 29 30 31
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