參數(shù)資料
型號(hào): M27256-2F1
廠商: 意法半導(dǎo)體
英文描述: NMOS 256K 32K x 8 UV EPROM
中文描述: NMOS管256K 32K的× 8紫外線存儲(chǔ)器
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 62K
代理商: M27256-2F1
M74HC51
4/9
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25
°
C
-40 to 85
°
C
-55 to 125
°
C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
4.5
6.0
2.0
4.5
6.0
30
8
7
39
13
11
75
15
13
100
20
17
95
19
16
125
25
21
110
22
19
150
30
26
ns
t
PLH
t
PHL
Propagation Delay
Time
ns
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25
°
C
-40 to 85
°
C
-55 to 125
°
C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
5.0
5
10
10
10
pF
5.0
32
pF
相關(guān)PDF資料
PDF描述
M27256-2F6 NMOS 256K 32K x 8 UV EPROM
M27256-3F1 NMOS 256K 32K x 8 UV EPROM
M27256-3F6 NMOS 256K 32K x 8 UV EPROM
M27256-4F1 NMOS 256K 32K x 8 UV EPROM
M27256-4F6 NMOS 256K 32K x 8 UV EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M27256-2F6 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NMOS 64K 8K x 8 UV EPROM
M27256-35 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:256K(32K x 8) UV ERASABLE PROM
M27256-3F1 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NMOS 64K 8K x 8 UV EPROM
M27256-3F6 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NMOS 64K 8K x 8 UV EPROM
M27256-4F1 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NMOS 64K 8K x 8 UV EPROM