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參數(shù)資料
| 型號： | M27256-F6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 256K 32K x 8 UV EPROM |
| 中文描述： | NMOS管256K 32K的× 8紫外線存儲器 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 95K |
| 代理商： | M27256-F6 |
1/10
NOT FOR NEW DESIGN
November 2000
This is information on a product still in production but not recommended for new designs.
M27256
NMOS 256 Kbit (32Kb x 8) UV EPROM
I
FAST ACCESS TIME: 170ns
I
EXTENDED TEMPERATURE RANGE
I
SINGLE 5V SUPPLY VOLTAGE
I
LOW STANDBY CURRENT: 40mA max
I
TTL COMPATIBLE DURING READ and
PROGRAM
I
FAST PROGRAMMING ALGORITHM
I
ELECTRONIC SIGNATURE
I
PROGRAMMING VOLTAGE: 12V
DESCRIPTION
The M27256 is a 262,144 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 32.768 words by 8 bits.
The M27256 is housed in a 28 pin Window Ceram-
ic Frit-Seal Dual-in-Line package. The transparent
lid allows the user to expose the chip to ultraviolet
light to erase the bit pattern. A new pattern can
then be written to the device by following the pro-
gramming procedure.
Figure 1. Logic Diagram
AI00767B
15
A0-A14
Q0-Q7
VPP
VCC
M27256
G
E
VSS
8
1
28
FDIP28W (F)
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