參數(shù)資料
型號(hào): M27512-20F1
廠商: 意法半導(dǎo)體
英文描述: NMOS 512K 64K x 8 UV EPROM
中文描述: NMOS管為512k 64KX8的紫外線存儲(chǔ)器
文件頁數(shù): 1/11頁
文件大?。?/td> 90K
代理商: M27512-20F1
1/11
NOT FOR NEW DESIGN
November 2000
This is information on a product still in production but not recommended for new designs.
M27512
NMOS 512 Kbit (64Kb x 8) UV EPROM
I
FAST ACCESS TIME: 200ns
I
EXTENDED TEMPERATURE RANGE
I
SINGLE 5V SUPPLY VOLTAGE
I
LOW STANDBY CURRENT: 40mA max
I
TTL COMPATIBLE DURING READ and
PROGRAM
I
FAST PROGRAMMING ALGORITHM
I
ELECTRONIC SIGNATURE
I
PROGRAMMING VOLTAGE: 12V
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new pat-
tern can then be written to the device by following
the programming procedure.
Figure 1. Logic Diagram
AI00765B
16
Q0-Q7
VCC
M27512
GVPP
VSS
8
A0-A15
E
1
28
FDIP28W (F)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M27512-20F6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM
M27512-25F1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM
M27512-25F6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM
M27512-2F1 功能描述:可擦除可編程ROM DISC BY STM 07/01 DIP-28 64KX8 200NS RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92
M27512-2F6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM