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參數(shù)資料
| 型號(hào)： | M27512-25F1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 512K 64K x 8 UV EPROM |
| 中文描述： | NMOS管為512k 64KX8的紫外線存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | M27512-25F1 |
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while GV
PP
should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all dese-
lected memory devices are in their low power
standby mode and that the output pins are only
active when data is required from a particular mem-
ory device.
System Considerations
The power switching characteristics of fast
EPROMs require careful decoupling of the devices.
The supply current, I
CC
, has three segments that
are of interest to the system designer : the standby
current level, the active current level, and transient
current peaks that are produced by the falling and
rising edges of E. The magnitude of the transient
current peaks is dependent on the capacitive and
inductive loading of the device at the output. The
associated transient voltage peaks can be sup-
pressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommenced that a 1
μ
F ceramic
capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7
μ
F bulk electrolytic capacitor should be used
between V
CC
and V
SS
for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered, and after each erasure, all bits of
the M27512 are in the “1" state. Data is introduced
by selectively programming ”0s" into the desired bit
locations. Although only “0s” will be programmed,
both “1s” and “0s” can be present in the data word.
The only way to change a “0" to a ”1" is by ultraviolet
light erasure. The M27512 is in the programming
mode when GV
PP
input is at 12.5V and E is at
TTL-low. The data to be programmed is applied 8
bits in parallel to the data output pins. The levels
required for the address and data inputs are TTL.
The M27512 can use PRESTO Programming Algo-
rithm that drastically reduces the programming
time (typically less than 50 seconds). Nevertheless
to achieve compatibility with all programming
equipment, the standard Fast Programming Algo-
rithm may also be used.
Fast Programming Algorithm
Fast Programming Algorithm rapidly programs
M27512 EPROMs using an efficient and reliable
method suited to the production programming en-
vironment. Programming reliability is also ensured
as the incremental program margin of each byte is
continually monitored to determine when it has
been successfully programmed. A flowchart of the
M27512 Fast Programming Algorithm is shown in
Figure 8.
Mode
E
GV
PP
A9
Q0 - Q7
Read
V
IL
V
IL
X
Data Out
Output Disable
V
IL
V
IH
X
Hi-Z
Program
V
IL
Pulse
V
PP
X
Data In
Verify
V
IH
V
IL
X
Data Out
Program Inhibit
V
IH
V
PP
X
Hi-Z
Standby
V
IH
X
X
Hi-Z
Electronic Signature
V
IL
V
IL
V
ID
Codes
Note:
X = V
IH
or V
IL
, V
ID
= 12V
±
0.5%.
Table 3. Operating Modes
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
V
IL
0
0
1
0
0
0
0
0
20h
Device Code
V
IH
0
0
0
0
1
1
0
1
0Dh
Table 4. Electronic Signature
DEVICE OPERATION
(cont’d)
M27512
3/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27512-20F6 | NMOS 512K 64K x 8 UV EPROM |
| M2764A-3F1 | NMOS 64K 8K x 8 UV EPROM |
| M2764A-2F1 | NMOS 64K 8K x 8 UV EPROM |
| M2764A-25 | AVDVANCED 64K (8K x 8) UV ERASABLE PROM |
| M2764A | AVDVANCED 64K (8K x 8) UV ERASABLE PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27512-25F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512-2F1 | 功能描述:可擦除可編程ROM DISC BY STM 07/01 DIP-28 64KX8 200NS RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27512-2F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M275122FI | 制造商:ST MICRO 功能描述:New |
| M27512-30F1 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 DISC BY SGS 11/95 RoHS:否 制造商:STMicroelectronics 存儲(chǔ)容量: 組織: 數(shù)據(jù)保留: 最大時(shí)鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: |
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