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參數(shù)資料
| 型號： | M27512-3F1 |
| 廠商： | 意法半導體 |
| 英文描述： | NMOS 512K 64K x 8 UV EPROM |
| 中文描述： | NMOS管為512k 64KX8的紫外線存儲器 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 90K |
| 代理商： | M27512-3F1 |
Symbol
Alt
Parameter
Test
Condition
M27512
Unit
-2, -20
blank, -2 5
-3
Min
Max
Min
Max
Min Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
200
250
300
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
200
250
300
ns
t
GLQV
t
EHQZ
(2)
t
GHQZ
(2)
t
OE
Output Enable Low to Output Valid
E = V
IL
75
100
120
ns
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
55
0
60
0
105
ns
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
55
0
60
0
105
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
,
G = V
IL
0
0
0
ns
Notes:
1. V
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Table 7. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 5V
±
5% or 5V
±
10%; V
PP
= V
CC
)
Symbol
Parameter
Test Condition
0
≤
V
IN
≤
V
CC
V
OUT
= V
CC
E = V
IL
, G = V
IL
E = V
IH
Min
Max
±
10
±
10
125
Unit
μ
A
μ
A
mA
I
LI
I
LO
I
CC
I
CC1
V
IL
V
IH
V
OL
V
OH
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby)
40
mA
Input Low Voltage
–0.1
0.8
V
Input High Voltage
2
V
CC
+ 1
0.45
V
Output Low Voltage
I
OL
= 2.1mA
I
OH
= –400
μ
A
V
Output High Voltage
2.4
V
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 6. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 5V
±
5% or 5V
±
10%; V
PP
= V
CC
)
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±
10
μ
A
I
CC
Supply Current
150
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.1
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.45
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 8. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
M27512
5/11
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| M27512-25F1 | NMOS 512K 64K x 8 UV EPROM |
| M27512-20F6 | NMOS 512K 64K x 8 UV EPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27512-3F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 512K 64K x 8 UV EPROM |
| M27512F1 | 功能描述:可擦除可編程ROM DISC BY STM 11/01 DIP-28 64KX8 250NS RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| M275FAN | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:5x7 mm, 3.3 Volt, HCMOS/TTL Compatible Output, Clock Oscillator |
| M275FCN | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:5x7 mm, 3.3 Volt, HCMOS/TTL Compatible Output, Clock Oscillator |
| M275FGN | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:5x7 mm, 3.3 Volt, HCMOS/TTL Compatible Output, Clock Oscillator |
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