參數(shù)資料
型號: M27C4001
廠商: 意法半導體
英文描述: 4 Megabit (512K x 8) UV EPROM and OTP EPROM(4M 位紫外線擦除EPROM和OTP EPROM)
中文描述: 4兆位(為512k × 8)紫外線存儲器和OTP存儲器(4分位紫外線擦除存儲器和檢察官存儲器)
文件頁數(shù): 7/16頁
文件大?。?/td> 136K
代理商: M27C4001
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
V
IN
V
CC
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Note:
1. V
CC
must be applied simultaneously with or before V
PP
andremoved simultaneously orafter V
PP
.
Table 9. ProgrammingMode DCCharacteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V;V
PP
= 12.75V
±
0.25V)
Symbol
Alt
Parameter
TestCondition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
2
μ
s
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μ
s
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μ
s
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
2
μ
s
t
ELEH
t
PW
Chip Enable Program Pulse
Width
95
105
μ
s
t
EHQX
t
DH
Chip Enable High to Input
Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable
Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output
Valid
100
ns
t
GHQZ
t
DFP
Output Enable High to Output
Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
Notes:
1. V
must be applied simultaneously with or before V
PP
andremoved simultaneously orafter V
PP
.
2. Sampled only, not 100% tested.
Table 10 Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V;V
PP
= 12.75V
±
0.25V)
7/16
M27C4001
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